P. Vincent, Federico Panciera, I. Florea, A. Ayari, S. Perisanu, C. S. Cojocaru, Haifa Taoum, Chen Wei, K. Saidov, U. Mirsaidov, Ilias Aguili, Nicholas Blanchard, P. Legagneux, S. Purcell
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引用次数: 0
Abstract
Optimizing the synthesis of carbon nanotubes (CNTs) for applications like field emission (FE) sources requires a fundamental understanding of the growth kinetics of individual CNTs. In this article, we explore how applying electric fields during CNT synthesis influences the as-grown nanotubes and their FE performance. We observe growth and undertake FE measurements in real time using an environmental transmission electron microscope. This is achieved through a polarizable capacitor gap within a microchip sample heater specifically designed for this purpose. Individual nanotubes are easily resolved and are predominantly single-wall CNTs. At low-applied fields, the growing nanotubes can span the gap and link with the opposite electrode, albeit with some loss due to mechanical failure. With a high-applied field and positive bias for FE, we continue to observe the oriented growth of nanotubes. However, this growth is constrained within the gap due to the possibility of FE occurring during the growth process, which can result in either saturation or damage. At any given time, we have the flexibility to halt the growth process and conduct in situ FE experiments. This approach enables us to comprehensively track the complete development of the CNTs and gain insights into the various mechanisms responsible for limiting the performance of CNT cathodes. Interestingly, we report an original self-oscillation induced destruction mechanism that has not been reported before.
要优化碳纳米管 (CNT) 的合成,使其用于场发射 (FE) 源等应用,就必须从根本上了解单个 CNT 的生长动力学。在本文中,我们将探讨在 CNT 合成过程中施加电场如何影响生长后的纳米管及其 FE 性能。我们使用环境透射电子显微镜实时观察生长情况并进行 FE 测量。这是通过专门为此设计的微芯片样品加热器内的可极化电容器间隙实现的。单个纳米管很容易分辨,而且主要是单壁 CNT。在低电场下,生长中的纳米管可以跨越间隙并与对面的电极连接,尽管会因机械故障而造成一些损失。在高施加磁场和正偏置 FE 的情况下,我们继续观察到纳米管的定向生长。然而,由于在生长过程中可能发生 FE,从而导致饱和或损坏,因此这种生长在间隙内受到限制。在任何时候,我们都可以灵活地停止生长过程,并进行原位 FE 实验。这种方法使我们能够全面跟踪碳纳米管的整个发展过程,并深入了解限制碳纳米管阴极性能的各种机制。有趣的是,我们报告了一种前所未有的自振荡诱导破坏机制。