Phase Equilibria in the Ti-Rich Portion of the Ti-Ga-Sn System

IF 1.5 4区材料科学 Q4 CHEMISTRY, PHYSICAL Journal of Phase Equilibria and Diffusion Pub Date : 2024-03-29 DOI:10.1007/s11669-024-01100-3

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Abstract

Phase equilibria of the Ti-Ga-Sn system have been determined at primary crystallization and at 1000 °C in the composition interval ~ 50-100 at.% Ti based on differential thermal analysis, x-ray powder diffraction, scanning electron microscopy and electron microprobe analysis. Partial liquidus and solidus projections, the melting diagram, a number of vertical sections, isothermal section at 1000 °C, as well as the reaction scheme (Scheil diagram) for the Ti-Ga-Sn system were constructed. A ternary compound Ti₅GaSn₂ (τ) (Nb₅SiSn₂-type structure, tI32-I4/mcm), found by us previously, forms by peritectic reaction L + Ti₂(Sn, Ga) + Ti₅(Sn, Ga)_3-4 ⇄ τ at 1500 °C and has a wide homogeneity range from 9 to 23.5 at.% Ga at solidus temperature and from 4 to 34 at.% Ga at 1000 °C, and located along constant composition of ~ 62.5 at.% Ti. D8₈-type compounds Ti₅Sn₃ and Ti₅Ga₄ form a continuous solid solution, denoted Ti₅(Sn, Ga)_3-4, at all investigated temperatures. Ga-poor part of it (below ~ 12.5 at.% Ga) forms by an interstitial mechanism, while in the interval above ~ 12.5 at.% Ga it is a substitutional phase. Isostructural compounds Ti₂Sn and Ti₂Ga also form a continuous solid solution Ti₂(Sn, Ga) at solidus temperatures, which decomposes with decreasing temperature. Meanwhile, at 1000 °C, one more continuous solid solution Ti₃(Sn, Ga) forms between isostructural compounds Ti₃Sn and Ti₃Ga.

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钛-镓-硒体系富钛部分的相平衡

摘要根据差热分析、X 射线粉末衍射、扫描电子显微镜和电子微探针分析，确定了钛-镓-硒体系在初级结晶和 1000 °C、钛含量为 50-100 % 时的相平衡。构建了 Ti-Ga-Sn 系统的部分液相和固相投影图、熔化图、若干垂直剖面图、1000 ℃ 等温剖面图以及反应方案（Scheil 图）。我们以前发现的一种三元化合物 Ti5GaSn2 (τ) （Nb5SiSn2-型结构，tI32-I4/mcm）是在 1500 °C时通过包晶反应 L + Ti2(Sn, Ga) + Ti5(Sn, Ga)3-4 ⇄ τ 形成的，其均一性范围很宽，在凝固温度下为 9 至 23.5 % Ga，在 1000 °C时为 4 至 34 % Ga，其恒定成分为 ~ 62.5 % Ti。在所有研究温度下，D88 型化合物 Ti5Sn3 和 Ti5Ga4 形成连续固溶体，称为 Ti5(Sn,Ga)3-4。其中贫镓部分（低于 ~ 12.5 at.% Ga）是通过间隙机制形成的，而在高于 ~ 12.5 at.% Ga 的区间内则是一种取代相。等结构化合物 Ti2Sn 和 Ti2Ga 还在固相温度下形成连续固溶体 Ti2（Sn，Ga），并随着温度的降低而分解。同时，在 1000 °C 时，等结构化合物 Ti3Sn 和 Ti3Ga 之间会形成另一种连续固溶体 Ti3（Sn，Ga）。

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来源期刊

Journal of Phase Equilibria and Diffusion 工程技术-材料科学：综合

CiteScore

2.50

自引率

7.10%

发文量

审稿时长

1 months

期刊介绍： The most trusted journal for phase equilibria and thermodynamic research, ASM International''s Journal of Phase Equilibria and Diffusion features critical phase diagram evaluations on scientifically and industrially important alloy systems, authored by international experts. The Journal of Phase Equilibria and Diffusion is critically reviewed and contains basic and applied research results, a survey of current literature and other pertinent articles. The journal covers the significance of diagrams as well as new research techniques, equipment, data evaluation, nomenclature, presentation and other aspects of phase diagram preparation and use. Content includes information on phenomena such as kinetic control of equilibrium, coherency effects, impurity effects, and thermodynamic and crystallographic characteristics. The journal updates systems previously published in the Bulletin of Alloy Phase Diagrams as new data are discovered.