Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled p-Type Dummy Region

Abstract

A novel trench insulated gate bipolar transistor (TIGBT) with a shallow emitter trench controlled P-type dummy region (STCP-TIGBT) is proposed. Compared with the conventional TIGBT with floating P-type dummy region (CFP-TIGBT) and TIGBT with floating P-type dummy region and normally on hole path (HFP-TIGBT), the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge $(Q_{\text{gc}})$ . Therefore, both the power loss and electromagnetic interference (EMI) noise are significantly reduced. Simulation results show that the $Q_{\text{gc}}$ of the proposed device is only 501 $\text{nC}/\text{cm}^{2}$ , which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT, respectively. At same on-state voltage drop $(V_{\text{ceon}})$ of 1.02 V, the turn-off loss $(E_{\text{off})})$ of the proposed device is 13.49 $\text{mJ}/\text{cm}^{2}$ , which is 64.6% and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT, respectively. Moreover, the reverse recovery $\mathrm{d}V_{\text{ak}}/\text{dt}$ of the freewheeling diode at same turn-on loss $(E_{\text{on}})$ of 31.8 $\text{mJ}/\text{cm}^{2}$ for the proposed STCP-TIGBT is only 2.15 $\text{kV}/\mu \mathrm{s}$ , which is reduced by 91.3% and 57.2% when compared to 24.69 $\mathrm{kV}/\mu \mathrm{s}$ and 5.02 $\mathrm{kV}/\mu \mathrm{s}$ for the CFP-TIGBT and HFP-TIGBT, respectively. The reduced $\mathrm{d}V/\mathrm{d}t$ significantly suppresses the electromagnetic interference noise generated by the proposed device.