Variation in Root System Architecture Response to Arsenic during Establishment and Onset of Storage Root Formation in Two Sweetpotato (Ipomoea batatas L.) Cultivars

IF 1.5 3区 农林科学 Q2 HORTICULTURE Hortscience Pub Date : 2024-04-01 DOI:10.21273/hortsci17616-23
A. Villordon, Jack Baricuatro
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Abstract

The primary objective of this work was to generate species-specific information about root architectural adaptations to simulated natural levels of arsenic (As) during the establishment phase and onset of storage root formation in sweetpotato. Cultivars Bayou Belle and Beauregard were grown on sand substrate and provided with 0.5X Hoagland’s nutrient solution with varying levels of As (0, 5, 10, or 15 mg⋅L−1). During the first experiment, entire root systems were sampled at 5, 10, and 15 days, corresponding to key adventitious root developmental stages. Compared with the untreated controls at 15 days, ‘Bayou Belle’ and ‘Beauregard’ provided with 15 mg⋅L−1 As showed respective increases in the following root architectural attributes: 168% and 130% in main root length; 168% and 98% in lateral root length; and 140% and 50% in lateral root density. A second experiment was performed to produce storage root samples at 50 days. Storage root length, width, and length/width ratio did not vary with As levels. The accumulation of As in storage roots increased with increasing As levels. The results support the hypothesis that natural As levels stimulate adventitious root development in sweetpotato in a cultivar-dependent manner. The observations are consistent with findings of other species that show similar growth stimulation at low As levels. This is the first report of sweetpotato root system architecture responses to experimental levels of As that are known to be present in agricultural soils. Standardization of experimental procedures and understanding of root system adaptations to natural levels of As could lead to a more systematic exploitation of genome-wide techniques and characterization of the molecular basis of reduced As uptake in plants.
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两种甘薯(Ipomoea batatas L.)栽培品种在根系建立和贮藏根形成过程中对砷的反应差异
这项工作的主要目的是在甘薯根系建立阶段和贮藏根形成初期,获得根系结构对模拟自然砷(As)水平的适应性的特定物种信息。栽培品种 Bayou Belle 和 Beauregard 生长在沙质基质上,并提供含有不同砷含量(0、5、10 或 15 mg-L-1)的 0.5 倍 Hoagland 营养液。在第一次实验中,在 5 天、10 天和 15 天,即不定根的关键发育阶段,对整个根系进行取样。与 15 天时未经处理的对照组相比,施用 15 mg⋅L-1 As 的'Bayou Belle'和'Beauregard'在以下根系结构属性方面分别有所提高:主根长度分别增加 168% 和 130%;侧根长度分别增加 168% 和 98%;侧根密度分别增加 140% 和 50%。第二项实验是在 50 天时制作贮藏根样品。贮藏根的长度、宽度和长宽比并不随砷含量的变化而变化。随着 As 含量的增加,贮藏根中 As 的积累量也在增加。这些结果支持了自然砷水平以依赖于栽培品种的方式刺激甘薯不定根发育的假设。这些观察结果与其他物种的研究结果一致,其他物种在低砷水平下也表现出类似的生长刺激作用。这是首次报道甘薯根系结构对已知存在于农业土壤中的砷的实验水平的反应。实验程序的标准化以及根系对自然砷水平适应性的了解,将有助于更系统地利用全基因组技术,并确定植物砷吸收减少的分子基础。
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来源期刊
Hortscience
Hortscience 农林科学-园艺
CiteScore
3.00
自引率
10.50%
发文量
224
审稿时长
3 months
期刊介绍: HortScience publishes horticultural information of interest to a broad array of horticulturists. Its goals are to apprise horticultural scientists and others interested in horticulture of scientific and industry developments and of significant research, education, or extension findings or methods.
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