Determination of energy disorder value in amorphous oxide semiconductors

Abstract

The amorphous material films are resistant to high-energy irradiation. Therefore, devices built using the properties of these materials can work in conditions of increased radiation much longer than devices using the properties of crystals. An important characteristic of these materials is their degree of disorder. To determine this characteristic, a model of random fluctuations of the local edge of the conduction band is considered for the theoretical study of magnetoconductivity in amorphous oxide semiconductors. The effective medium approximation is used. An approach to determining the amount of energy disorder based on experimental measurement of changes in longitudinal and transverse electrical conductivity in a magnetic field is proposed.