{"title":"The Design of a 4H-SiC SGT MOSFET","authors":"Haoran Wu, Shiguang Shang, Zilong Huang","doi":"10.1109/ICPECA60615.2024.10471111","DOIUrl":null,"url":null,"abstract":"A SiC SGT MOSFET is proposed to solve the problem of the trade-off relationship between specific on-resistance (Ron, sp) and breakdown voltage (BV), which demonstrated its process flow and some parameters which influence its static characteristics such as EPI Concentration, Shield gate Oxide thickness and so on. In addition, in UIS tests, the avalanche tolerance of the novel structure of the proposed structure is between than that of VDMOS and Trench MOSFET, which may mean the better EAS in practical application.","PeriodicalId":518671,"journal":{"name":"2024 IEEE 4th International Conference on Power, Electronics and Computer Applications (ICPECA)","volume":"8 3","pages":"754-758"},"PeriodicalIF":0.0000,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2024 IEEE 4th International Conference on Power, Electronics and Computer Applications (ICPECA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICPECA60615.2024.10471111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A SiC SGT MOSFET is proposed to solve the problem of the trade-off relationship between specific on-resistance (Ron, sp) and breakdown voltage (BV), which demonstrated its process flow and some parameters which influence its static characteristics such as EPI Concentration, Shield gate Oxide thickness and so on. In addition, in UIS tests, the avalanche tolerance of the novel structure of the proposed structure is between than that of VDMOS and Trench MOSFET, which may mean the better EAS in practical application.
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