Electronic structure and optical properties of alkali metal X (X=Li, Na, K, Rb, Cs) adsorbed in the Te vacancy-deficient molybdenum ditelluride system: A first-principles study

IF 2.2 4区 物理与天体物理 Q3 PHYSICS, APPLIED Modern Physics Letters B Pub Date : 2024-04-09 DOI:10.1142/s0217984924502713
Ying Dai, Guili Liu, Jianlin He, Junjie Ni, Guoying Zhang
{"title":"Electronic structure and optical properties of alkali metal X (X=Li, Na, K, Rb, Cs) adsorbed in the Te vacancy-deficient molybdenum ditelluride system: A first-principles study","authors":"Ying Dai, Guili Liu, Jianlin He, Junjie Ni, Guoying Zhang","doi":"10.1142/s0217984924502713","DOIUrl":null,"url":null,"abstract":"<p>In the framework of density functional theory, based on first principles, the plane wave pseudopotential technique was utilized to investigate the electrical and optical properties of MoTe<sub>2</sub> adjusted by alkali metal X adsorption on Te vacancy defects (X<span><math altimg=\"eq-00003.gif\" display=\"inline\" overflow=\"scroll\"><mspace width=\".17em\"></mspace></math></span><span></span>=<span><math altimg=\"eq-00004.gif\" display=\"inline\" overflow=\"scroll\"><mspace width=\".17em\"></mspace></math></span><span></span>Li, Na, K, Rb, Cs). The adsorption of alkali metals on Te vacancy-deficient MoTe<sub>2</sub> monolayers has been computationally analyzed. Charge transfer, electronic structure, and optical properties of alkali metal adsorption were systematically studied. It is shown that the MoTe<sub>2</sub> bandgap is significantly reduced under Te vacancies. Te vacancies are frequently active sites in TMDs materials. With the adsorption of alkali metal atoms X (X = Li, Na, K, Rb, Cs) in the Te vacancy MoTe<sub>2</sub> system, Li atoms have the most substantial geometrical deformation and the minor adsorption energy and can improve the adsorption properties more effectively. The MoTe<sub>2</sub> system undergoes a change from semiconductor to metal after adsorption. Regarding optical properties, firm absorption and reflection peaks appeared, and a blueshift phenomenon was observed in the mountains. It is expected that these discoveries are likely to guide the use of molybdenum ditelluride in optoelectronics.</p>","PeriodicalId":18570,"journal":{"name":"Modern Physics Letters B","volume":"97 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Physics Letters B","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1142/s0217984924502713","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
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Abstract

In the framework of density functional theory, based on first principles, the plane wave pseudopotential technique was utilized to investigate the electrical and optical properties of MoTe2 adjusted by alkali metal X adsorption on Te vacancy defects (X=Li, Na, K, Rb, Cs). The adsorption of alkali metals on Te vacancy-deficient MoTe2 monolayers has been computationally analyzed. Charge transfer, electronic structure, and optical properties of alkali metal adsorption were systematically studied. It is shown that the MoTe2 bandgap is significantly reduced under Te vacancies. Te vacancies are frequently active sites in TMDs materials. With the adsorption of alkali metal atoms X (X = Li, Na, K, Rb, Cs) in the Te vacancy MoTe2 system, Li atoms have the most substantial geometrical deformation and the minor adsorption energy and can improve the adsorption properties more effectively. The MoTe2 system undergoes a change from semiconductor to metal after adsorption. Regarding optical properties, firm absorption and reflection peaks appeared, and a blueshift phenomenon was observed in the mountains. It is expected that these discoveries are likely to guide the use of molybdenum ditelluride in optoelectronics.

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碱金属 X(X=Li、Na、K、Rb、Cs)吸附在缺 Te 空位的二碲化钼体系中的电子结构和光学性质:第一原理研究
在密度泛函理论的框架内,基于第一性原理,利用平面波伪势技术研究了碱金属 X 在 Te 空位缺陷(X=Li、Na、K、Rb、Cs)上的吸附所调整的 MoTe2 的电学和光学性质。计算分析了碱金属对 Te 空位缺陷 MoTe2 单层的吸附。系统研究了碱金属吸附的电荷转移、电子结构和光学性质。结果表明,在 Te 空位的作用下,MoTe2 带隙显著减小。Te 空位是 TMDs 材料中常见的活性位点。随着碱金属原子 X(X = Li、Na、K、Rb、Cs)在 Te 空位 MoTe2 体系中的吸附,Li 原子的几何形变最大,吸附能最小,能更有效地改善吸附性能。吸附后的 MoTe2 体系发生了从半导体到金属的转变。在光学性质方面,出现了坚固的吸收峰和反射峰,并在山体中观察到蓝移现象。这些发现有望为二碲化钼在光电子领域的应用提供指导。
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来源期刊
Modern Physics Letters B
Modern Physics Letters B 物理-物理:凝聚态物理
CiteScore
3.70
自引率
10.50%
发文量
235
审稿时长
5.9 months
期刊介绍: MPLB opens a channel for the fast circulation of important and useful research findings in Condensed Matter Physics, Statistical Physics, as well as Atomic, Molecular and Optical Physics. A strong emphasis is placed on topics of current interest, such as cold atoms and molecules, new topological materials and phases, and novel low-dimensional materials. The journal also contains a Brief Reviews section with the purpose of publishing short reports on the latest experimental findings and urgent new theoretical developments.
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