V. M. Masalov, N. S. Sukhinina, D. N. Sovyk, V. G. Ralchenko, G. A. Emel’chenko
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引用次数: 0
Abstract
The kinetics of the synthesis of silica nanoparticles (<50 nm) has been studied under the conditions of heterogeneous hydrolysis of tetraethoxysilane (TEOS) using L-arginine as an alkaline catalyst. The rates of silica formation have been determined in a temperature range of 10–95°C at catalyst concentrations of 6–150 mM. It has been shown that the activation energy of the process depends on catalyst concentration and varies in a range of 21.5–13.9 kJ/mol, while decreasing linearly with increasing concentration of L-arginine in the system. The criterion of maintaining the monodispersity has been estimated for SiO2 particles being grown “onto seeds.” The density of submicron-sized silica particles has been experimentally determined as depending on the annealing temperature. Within a temperature range of 200–1000°C, the particle density varies from 2.04 to 2.20 g/cm3.
期刊介绍：
Colloid Journal (Kolloidnyi Zhurnal) is the only journal in Russia that publishes the results of research in the area of chemical science dealing with the disperse state of matter and surface phenomena in disperse systems. The journal covers experimental and theoretical works on a great variety of colloid and surface phenomena: the structure and properties of interfaces; adsorption phenomena and structure of adsorption layers of surfactants; capillary phenomena; wetting films; wetting and spreading; and detergency. The formation of colloid systems, their molecular-kinetic and optical properties, surface forces, interaction of colloidal particles, stabilization, and criteria of stability loss of different disperse systems (lyosols and aerosols, suspensions, emulsions, foams, and micellar systems) are also topics of the journal. Colloid Journal also includes the phenomena of electro- and diffusiophoresis, electro- and thermoosmosis, and capillary and reverse osmosis, i.e., phenomena dealing with the existence of diffusion layers of molecules and ions in the vicinity of the interface.
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