A. P. Baraban, V. A. Dmitriev, A. V. Drozd, Yu. V. Petrov, I. E. Gabis, A. A. Selivanov
{"title":"Luminescence of Oxide Films Obtained by Atomic Layer Deposition","authors":"A. P. Baraban, V. A. Dmitriev, A. V. Drozd, Yu. V. Petrov, I. E. Gabis, A. A. Selivanov","doi":"10.1134/s1063774523601211","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibilities of the luminescence method for studying Si–oxide and Si–SiO<sub>2</sub>–oxide structures have been demonstrated. A model of the electronic structure of Ta<sub>2</sub>O<sub>5</sub> and TiO<sub>2</sub> layers is proposed, which explains the shape of the spectral luminescence distribution independent of the excitation way. A comparison of the luminescence spectra of single oxide layers with the spectrum of Si–SiO<sub>2</sub>–oxide structures made it possible to draw conclusions about the interaction between layers during layered structure formation and estimate the band gap: 4.4 and 3.3 eV for Ta<sub>2</sub>O<sub>5</sub> and TiO<sub>2</sub>, respectively. The formation of Ta<sub>2</sub>O<sub>5</sub> on the SiO<sub>2</sub> surface led to transformation in the SiO<sub>2</sub> surface region, manifesting itself in weakening of the luminescence band at 1.9 eV and formation of defects (luminescence centers) in the vicinity of 3 eV. Synthesis of TiO<sub>2</sub> on the surface of SiO<sub>2</sub> was not accompanied by any changes in the luminescence spectra.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1134/s1063774523601211","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
The possibilities of the luminescence method for studying Si–oxide and Si–SiO2–oxide structures have been demonstrated. A model of the electronic structure of Ta2O5 and TiO2 layers is proposed, which explains the shape of the spectral luminescence distribution independent of the excitation way. A comparison of the luminescence spectra of single oxide layers with the spectrum of Si–SiO2–oxide structures made it possible to draw conclusions about the interaction between layers during layered structure formation and estimate the band gap: 4.4 and 3.3 eV for Ta2O5 and TiO2, respectively. The formation of Ta2O5 on the SiO2 surface led to transformation in the SiO2 surface region, manifesting itself in weakening of the luminescence band at 1.9 eV and formation of defects (luminescence centers) in the vicinity of 3 eV. Synthesis of TiO2 on the surface of SiO2 was not accompanied by any changes in the luminescence spectra.
期刊介绍：
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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