New Debye Temperature Model of 4H‐SiC Crystal

Abstract

The Debye temperature is a crucial parameter in understanding various properties of solids, including their melting temperature. This study focuses on 4H‐SiC, a material renowned for its wide bandgap and high thermal conductivity, making it ideal for high‐power electronic devices. Calculating various physical parameters for 4H‐SiC, including the Debye temperature, is crucial for semiconductor fabrication. However, it is observed that existing Debye models are unsuitable for computing the Debye temperature of 4H‐SiC. Therefore, phonon calculations alongside the Debye model to establish a new model for determining the Debye temperature of 4H‐SiC are used. This research has identified an optimal temperature range, referred to as the ‘T150’ model, between 150 and 160 K, which yields a Debye temperature consistent with experimental values. The newly developed “T150” model, demonstrated herein, holds the potential for determining the Debye temperatures of doped 4H‐SiC, other polytypes of 4H‐SiC, and other semiconductor materials, broadening its applicability in material science.