Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers

V. Timofeev, Ilya Skvortsov, V. Mashanov, Alexander Nikiforov, D. Kolyada, D. Firsov, Oleg Komkov, Samir Samadov, Alexey Sidorin, Oleg Orlov
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Abstract

Effects of postgrowth high-temperature annealing on vacancy complexes and photoluminescence (PL) from GeSiSn/Si multiple quantum wells (MQWs) are studied. The series of PL peaks related to the vacancy-tin complexes was observed for as-grown samples including different structures, such as GeSiSn/Si MQWs, multilayer periodic structure with GeSiSn quantum dots (QDs), GeSn cross-structures upon GeSiSn/Si MQWs, and thick GeSiSn layers. The PL band intensity is significantly reduced after annealing at 700 °C corresponding to the reduction in vacancy density, as demonstrated by the positron annihilation spectroscopy (PAS) data. Such annealing also results in the appearance of the PL signal related to the interband optical transitions in GeSiSn/Si MQWs. However, the high temperature could negatively impact the sharpness of heterointerfaces due to Sn diffusion, thus limiting the PL efficiency. To improve the luminescence properties of GeSiSn/Si structures, we proposed a two-stage technique combining both the annealing and subsequent treatment of samples in a hydrogen plasma at 200 °C. The plasma treatment significantly reduces the PL band of vacancy-related defects, whereas annealing at a moderate temperature of ∼600 °C prevents the blurring of heterointerfaces. As a result, we demonstrate an increase in the relative efficiency of interband PL of type II GeSiSn/Si MQW structures emitting in the range of 1.5–2 μm.
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高温退火对具有弹性应变 GeSiSn 层的多层周期结构中空位复合物和发光特性的影响
研究了生长后高温退火对 GeSiSn/Si 多量子阱(MQW)的空位复合物和光致发光(PL)的影响。在不同结构(如 GeSiSn/Si MQWs、带有 GeSiSn 量子点(QDs)的多层周期结构、GeSiSn/Si MQWs 上的 GeSn 交叉结构和厚 GeSiSn 层)的生长样品中,观察到了一系列与空位锡复合物有关的 PL 峰。正电子湮灭光谱(PAS)数据表明,在 700 °C 退火后,PL 带强度明显降低,这与空位密度降低有关。这种退火还导致出现与 GeSiSn/Si MQW 中带间光学跃迁有关的 PL 信号。然而,由于锡的扩散,高温可能会对异质界面的锐利度产生负面影响,从而限制了 PL 效率。为了改善 GeSiSn/Si 结构的发光特性,我们提出了一种两阶段技术,即退火和随后在 200 °C 氢等离子体中处理样品。等离子体处理大大降低了空位相关缺陷的 PL 带,而 600 ℃ 的中等温度退火则防止了异质界面的模糊。因此,我们证明了在 1.5-2 μm 范围内发光的 II 型 GeSiSn/Si MQW 结构的带间 PL 相对效率有所提高。
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