Microfabrication of Si by KOH Etchant Using Etching Masks Amorphized by Ion Beam Extracted From Electron Cyclotron Plasma

Abstract

We demonstrated KOH etching with an etching mask amorphized by ion irradiation. Amorphized masks were prepared by irradiating ion species (Ar + , Kr + , Xe + , N + , O + ) at an ion energy of 500 eV with an electron cyclotron resonance ion shower system. The parameters for KOH etching were also studied. In addition, we fabricated structures with an aspect ratio of over 3000 and microfluidic devices using the proposed microfabrication technique. This technique is expected to be useful for the microfabrication of Si structures.