Valleytronics in two-dimensional magnetic materials

Chaobo Luo, Zongyu Huang, H. Qiao, Xiang Qi, Xiangyang Peng
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Abstract

Valleytronics uses valleys to encode information. It combines other degrees of freedom to produce a more comprehensive, stable, and efficient information processing system. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and -K Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX2; M(XY)2, M(XY2) and M(XYZ)2; M2X3, M3X8 and MNX6; MNX2Y2, M2X2Y6 and MNX2Y6; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.
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二维磁性材料中的谷电技术
谷创利用谷来编码信息。它结合了其他自由度,从而产生了一个更全面、稳定和高效的信息处理系统。然而,在非磁性谷电材料中,谷极化是瞬时的,一旦外部激励撤消,就会发生去极化。通过打破时间反转对称性,引入磁场是实现自发谷极化的有效方法。在六方磁性谷电材料中,K 和 -K Dirac 锥处的不等价谷具有不对称的能隙和贝里曲率。非磁性材料中的时间反转对称性可以通过施加外部磁场、添加磁性衬底或掺杂磁性原子来打破。最近的理论研究表明,具有固有铁磁性的谷电材料(现称为铁谷材料)会表现出自发的谷极化,而无需外部磁场来维持极化。谷自由度和自旋自由度的耦合使得电子在两个谷中的分布稳定而不均,从而促进了非易失性信息的存储。因此,铁谷材料是很有前途的谷电子器件材料。在这篇综述中,我们首先简要介绍了谷电及其相关特性,以及在非磁性谷电材料中实现谷极化的方法。然后,我们重点介绍二维铁谷材料的最新发展,这些材料可根据其分子式和晶体结构进行分类:MX2;M(XY)2、M(XY2) 和 M(XYZ)2;M2X3、M3X8 和 MNX6;MNX2Y2、M2X2Y6 和 MNX2Y6;以及 Janus 结构铁电体材料。在不等价谷中,贝里曲率的符号相反,绝对值不等,从而导致反常谷霍尔效应。当山谷极化较大时,即使使用非极化光也能选择性地激发铁电体。二维铁电体材料的本征谷极化具有重要意义。它为信息相关应用开辟了一条新途径,因此正处于快速发展阶段。
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