Valleytronics in two-dimensional magnetic materials

Chaobo Luo, Zongyu Huang, H. Qiao, Xiang Qi, Xiangyang Peng
{"title":"Valleytronics in two-dimensional magnetic materials","authors":"Chaobo Luo, Zongyu Huang, H. Qiao, Xiang Qi, Xiangyang Peng","doi":"10.1088/2515-7639/ad3b6e","DOIUrl":null,"url":null,"abstract":"\n Valleytronics uses valleys to encode information. It combines other degrees of freedom to produce a more comprehensive, stable, and efficient information processing system. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and -K Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX2; M(XY)2, M(XY2) and M(XYZ)2; M2X3, M3X8 and MNX6; MNX2Y2, M2X2Y6 and MNX2Y6; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.","PeriodicalId":501825,"journal":{"name":"Journal of Physics: Materials","volume":"30 12","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics: Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2515-7639/ad3b6e","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Valleytronics uses valleys to encode information. It combines other degrees of freedom to produce a more comprehensive, stable, and efficient information processing system. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and -K Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX2; M(XY)2, M(XY2) and M(XYZ)2; M2X3, M3X8 and MNX6; MNX2Y2, M2X2Y6 and MNX2Y6; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
二维磁性材料中的谷电技术
谷创利用谷来编码信息。它结合了其他自由度,从而产生了一个更全面、稳定和高效的信息处理系统。然而,在非磁性谷电材料中,谷极化是瞬时的,一旦外部激励撤消,就会发生去极化。通过打破时间反转对称性,引入磁场是实现自发谷极化的有效方法。在六方磁性谷电材料中,K 和 -K Dirac 锥处的不等价谷具有不对称的能隙和贝里曲率。非磁性材料中的时间反转对称性可以通过施加外部磁场、添加磁性衬底或掺杂磁性原子来打破。最近的理论研究表明,具有固有铁磁性的谷电材料(现称为铁谷材料)会表现出自发的谷极化,而无需外部磁场来维持极化。谷自由度和自旋自由度的耦合使得电子在两个谷中的分布稳定而不均,从而促进了非易失性信息的存储。因此,铁谷材料是很有前途的谷电子器件材料。在这篇综述中,我们首先简要介绍了谷电及其相关特性,以及在非磁性谷电材料中实现谷极化的方法。然后,我们重点介绍二维铁谷材料的最新发展,这些材料可根据其分子式和晶体结构进行分类:MX2;M(XY)2、M(XY2) 和 M(XYZ)2;M2X3、M3X8 和 MNX6;MNX2Y2、M2X2Y6 和 MNX2Y6;以及 Janus 结构铁电体材料。在不等价谷中,贝里曲率的符号相反,绝对值不等,从而导致反常谷霍尔效应。当山谷极化较大时,即使使用非极化光也能选择性地激发铁电体。二维铁电体材料的本征谷极化具有重要意义。它为信息相关应用开辟了一条新途径,因此正处于快速发展阶段。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electronic transport in reactively sputtered Mn3GaN films prepared under optimized nitrogen flow Correlation between optical phonon softening and superconducting Tc in YBa2Cu3Ox within d-wave Eliashberg theory Tribological manufacturing of ZDDP tribofilms functionalised by graphene nanoplatelets Insights about the effect of metal-organic framework hybridization with graphene-like materials Mesoscale modeling of random chain scission in polyethylene melts
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1