{"title":"Effect of optimal rapid thermal alloying of ohmic contacts to microwave pseudomorphic HEMTs","authors":"G. Sai Saravanan, K. Muraleedharan","doi":"10.1080/10420150.2024.2318709","DOIUrl":null,"url":null,"abstract":"Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistors (pHEMTs) are currently used as active devices in manufacturing Monolithic Microwave Integrated Circuits (MMICs) for microwav...","PeriodicalId":20965,"journal":{"name":"Radiation Effects and Defects in Solids","volume":"50 1","pages":""},"PeriodicalIF":1.1000,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radiation Effects and Defects in Solids","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/10420150.2024.2318709","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NUCLEAR SCIENCE & TECHNOLOGY","Score":null,"Total":0}
引用次数: 0
Abstract
Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistors (pHEMTs) are currently used as active devices in manufacturing Monolithic Microwave Integrated Circuits (MMICs) for microwav...
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The Journal covers a wide range of topics under radiation and plasma sciences. The range of contributions encompasses: radiation physics; radiochemistry, radiobiology and physical effects of medical irradiation, including research on radiative cell degeneration; optical, electrical and mechanical effects of radiation, and their secondary effects such as diffusion and particle emission from surfaces; plasma techniques and plasma phenomena. On plasma science the Journal covers all areas of fusion, space and low temperature plasmas.
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