A. V. Voitsekhovskii, S. M. Dzyadukh, D. I. Gorn, S. A. Dvoretskii, N. N. Mikhailov, G. Yu. Sidorov, M. V. Yakushev
{"title":"Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages","authors":"A. V. Voitsekhovskii, S. M. Dzyadukh, D. I. Gorn, S. A. Dvoretskii, N. N. Mikhailov, G. Yu. Sidorov, M. V. Yakushev","doi":"10.1134/s1064226923140176","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper presents the results of studying the dark currents of <i>n</i>B(SL)<i>n</i> structures with a superlattice (SL) in the barrier region based on Hg<sub>1 – <i>x</i></sub>Cd<sub><i>x</i></sub>Te grown by molecular beam epitaxy (MBE) in a wide range of experimental conditions. Dark currents were measured in the temperature range from 11 to 300 K for mesa structures with different cross-sectional diameters. The temperature dependences of the bulk component of the dark current density and the surface leakage current density are determined. It is shown that in the studied structures the current-voltage characteristics (CVCs) are formed by both the bulk and surface components of the current depending on the temperature and bias voltage.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":"24 1","pages":""},"PeriodicalIF":0.4000,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Communications Technology and Electronics","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1134/s1064226923140176","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The paper presents the results of studying the dark currents of nB(SL)n structures with a superlattice (SL) in the barrier region based on Hg1 – xCdxTe grown by molecular beam epitaxy (MBE) in a wide range of experimental conditions. Dark currents were measured in the temperature range from 11 to 300 K for mesa structures with different cross-sectional diameters. The temperature dependences of the bulk component of the dark current density and the surface leakage current density are determined. It is shown that in the studied structures the current-voltage characteristics (CVCs) are formed by both the bulk and surface components of the current depending on the temperature and bias voltage.
期刊介绍：
Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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