Relaxation of the Excess Free Volume of the Phase Transformation at the Phase Interface between the Crystal and the Melt

IF 1.1 4区 材料科学 Q3 METALLURGY & METALLURGICAL ENGINEERING Physics of Metals and Metallography Pub Date : 2024-05-08 DOI:10.1134/s0031918x23602780
V. O. Esin
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Abstract

The paper analyzes the excess free volume relaxation mechanism of the phase transformation, which is realized in the local dilatation region at the phase interface between the crystal and the melt. It also examines the structural state of phase interface and its influence on the phase interface mobility under pressure, applied during crystal growth from the melt. The paper explains the extreme impact of pressure on the mobility of phase interface. It also discusses the possibility of the phase interface reaching a state of anomalously high mobility under “optimal” pressure (referred to as “ultra-mobility”). As part of the mechanism of viscous flow of melt into the local dilatation region at the phase interface, arising in the crystallization process, a quantitative agreement with the experimental value of the “optimal” pressure, which ensures the extreme nature of the crystal–melt phase interface mobility, has been obtained.

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晶体与熔体相界面上相变过剩自由体积的松弛
摘要 本文分析了相变的过量自由体积弛豫机制,该机制是在晶体和熔体之间相界面的局部扩张区域实现的。论文还研究了相界面的结构状态及其在熔体晶体生长过程中施加的压力对相界面流动性的影响。论文解释了压力对相界面流动性的极端影响。论文还讨论了相界面在 "最佳 "压力下达到异常高流动性状态(称为 "超流动性")的可能性。作为结晶过程中产生的熔体在相界面局部扩张区域的粘性流动机制的一部分,获得了与 "最佳 "压力实验值的定量一致,这确保了晶体-熔体相界面流动性的极端性质。
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来源期刊
Physics of Metals and Metallography
Physics of Metals and Metallography 工程技术-冶金工程
CiteScore
2.00
自引率
25.00%
发文量
108
审稿时长
3 months
期刊介绍: The Physics of Metals and Metallography (Fizika metallov i metallovedenie) was founded in 1955 by the USSR Academy of Sciences. Its scientific profile involves the theory of metals and metal alloys, their electrical and magnetic properties, as well as their structure, phase transformations, and principal mechanical properties. The journal also publishes scientific reviews and papers written by experts involved in fundamental, application, and technological studies. The annual volume of publications amounts to some 250 papers submitted from 100 leading national scientific institutions.
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