L. A. Mochalov, M. A. Kudryashov, M. A. Vshivtsev, Yu. P. Kudryashova, I. O. Prokhorov, A. V. Knyazev, A. V. Almaev, N. N. Yakovlev, E. V. Chernikov, N. N. Erzakova
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Abstract
For the first time, nanostructured thin films of the β-Ga2O3−GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents. Low-temperature nonequilibrium plasma of an inductively coupled RF (40.68 MHz) discharge at reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma-chemical process was studied using optical emission spectroscopy (OES). The resulting β-Ga2O3−GaN thin films with a GaN content of 2 to 7% were characterized by various analytical methods.
期刊介绍：
High Energy Chemistry publishes original articles, reviews, and short communications on molecular and supramolecular photochemistry, photobiology, radiation chemistry, plasma chemistry, chemistry of nanosized systems, chemistry of new atoms, processes and materials for optical information systems and other areas of high energy chemistry. It publishes theoretical and experimental studies in all areas of high energy chemistry, such as the interaction of high-energy particles with matter, the nature and reactivity of short-lived species induced by the action of particle and electromagnetic radiation or hot atoms on substances in their gaseous and condensed states, and chemical processes initiated in organic and inorganic systems by high-energy radiation.
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