Light Emission Characteristics in Nitride Semiconductor Nanowires Fabricated by Top‐down Method

Abstract

Nanophotonic devices made from nitride semiconductors are promising for various applications, especially those utilizing ultraviolet‐visible light with low‐power consumption and high driving speed. Herein, nanowire structures are fabricated from a light‐emitting diode  epitaxial wafer and demonstrates the effectiveness of wet etching in top‐down fabrication. Spontaneous emission from active layers and unanticipated lasing derived from a GaN layer in a single nanowire are observed by microphotoluminescence measurement. Lastly, the lasing mode through a 3D simulation of the eigenmodes in this nanowire structure is clarified.