Qiuyan Li, Weibing Hao, Jinyang Liu, Zhao Han, Song He, Xuanze Zhou, Guangwei Xu, Shibing Long
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引用次数: 0
Abstract
β-Ga2O3 power diodes were expected to possess low turn-on voltage (Von), low reverse leakage (JR), and high blocking capability for low power losses. In this work, a low Von (0.48 V) β-Ga2O3 heterojunction barrier Schottky diode (HJBS) with Tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p+-NiO to suppress JR originating from the low Schottky barrier, the blocking capability of β-Ga2O3 HJBS was enhanced. The spacing width of p+-NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga2O3 diodes.
期刊介绍：
ACS Applied Bio Materials is an interdisciplinary journal publishing original research covering all aspects of biomaterials and biointerfaces including and beyond the traditional biosensing, biomedical and therapeutic applications.
The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrates knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important bio applications. The journal is specifically interested in work that addresses the relationship between structure and function and assesses the stability and degradation of materials under relevant environmental and biological conditions.
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