Properties of the chalcogenide-based double perovskites Ba2NbBiS6 and Ba2TaSbS6 with respect to structural, electronic and optical aspects

H. Baaziz, T. Ghellab, Z. Charifi
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Abstract

In this work, we delve into the investigation of the structural, electronic, and optical properties of Ba2NbBiS6 and Ba2TaSbS6 chalcogenide-based double perovskites, which are structured in the cubic space group [Formula: see text] form. We have performed first-principles calculations using density functional theory (DFT) to study the above properties. The electronic band structure and density of states of this compound have been investigated, and their results show that Ba2NbBiS6 and Ba2TaSbS6 exhibit a semiconducting nature with an indirect energy gap of 1.680[Formula: see text]eV and 1.529[Formula: see text]eV, respectively. Furthermore, an investigation was conducted on the optical properties of the compounds throughout the energy range spanning from 0[Formula: see text]eV to 55[Formula: see text]eV. This investigation focused on many parameters, including dielectric functions, optical reflectivity, refractive index, extinction coefficient, optical conductivity, and electron energy loss. The optical data obtained from the calculations reveals that all compounds demonstrate isotropy in optical polarization. Furthermore, it has been noted that our compounds exhibit absorption properties inside the ultraviolet (UV) region. Consequently, these materials hold promise as potential candidates for various applications, such as UV photodetectors, UV light emitters, and power electronics. This is primarily attributed to their inherent absorption limits and the presence of prominent absorption peaks in this spectral range. In brief, chemical mutation techniques have been employed to manipulate the characteristics of double-sulfide perovskites to develop durable and environmentally friendly perovskite materials suitable for solar purposes.
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基于铬化砷的双包晶石 Ba2NbBiS6 和 Ba2TaSbS6 在结构、电子和光学方面的特性
在这项工作中,我们深入研究了 Ba2NbBiS6 和 Ba2TaSbS6 卤化物基双包晶石的结构、电子和光学特性,它们的结构形式为立方空间群[式:见正文]。我们利用密度泛函理论(DFT)进行了第一原理计算,以研究上述特性。研究结果表明,Ba2NbBiS6 和 Ba2TaSbS6 具有半导体性质,其间接能隙分别为 1.680[式:见正文]eV 和 1.529[式:见正文]eV。此外,还对这些化合物在 0[式:见正文]eV 至 55[式:见正文]eV 的整个能量范围内的光学特性进行了研究。这项研究的重点是许多参数,包括介电函数、光学反射率、折射率、消光系数、光导率和电子能量损失。通过计算获得的光学数据显示,所有化合物在光学偏振方面都表现出各向同性。此外,我们还注意到,我们的化合物在紫外线(UV)区域内表现出吸收特性。因此,这些材料有望成为紫外光检测器、紫外光发射器和电力电子器件等各种应用的潜在候选材料。这主要归功于它们固有的吸收极限以及在这一光谱范围内存在突出的吸收峰。简而言之,已采用化学突变技术来操纵双硫化物过氧化物的特性,从而开发出适用于太阳能用途的耐用且环保的过氧化物材料。
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