Magnetic domain structures in ultrathin Bi2Te3/CrTe2 heterostructures

Tirui Xia, Xiaotian Yang, Yifan Zhang, Xinqi Liu, Xinyu Cai, Chang Liu, Qi Yao, X. Kou, Wenbo Wang
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Abstract

Chromium tellurium compounds are important two-dimensional van der Waals ferromagnetic materials with high Curie temperature and chemical stability in air, which is promising for applications in spintronic devices. Here, high-quality spin-orbital-torque (SOT) device, Bi2Te3/CrTe2 heterostructure was epitaxially grown on Al2O3 (0001) substrates. Anomalous Hall measurements indicate the existence of strong ferromagnetism in this device with the CrTe2 thickness down to 10 nm. In order to investigate its micromagnetic structure, cryogenic magnetic force microscope (MFM) was utilized to measure the magnetic domain evolutions at various temperatures and magnetic fields. The virgin domain state of the device shows a worm-like magnetic domain structure with the size around 0.6 ~ 0.8 µm. Larger irregular-shape magnetic domains (>1µm) can be induced and pinned, after the field is increased to coercive field and ramped back to low fields. The temperature-dependent MFM signals exhibit a nice mean-field-like ferromagnetic transition with Curie temperature around 201.5 K, indicating a robust ferromagnetic ordering. Such device can be potentially implemented in future magnetic memory technology.
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超薄 Bi2Te3/CrTe2 异质结构中的磁畴结构
铬碲化合物是一种重要的二维范德华铁磁材料,具有较高的居里温度和在空气中的化学稳定性,有望应用于自旋电子器件。本文在 Al2O3 (0001) 基底上外延生长了高质量的自旋轨道转矩(SOT)器件--Bi2Te3/CrTe2 异质结构。反常霍尔测量结果表明,该器件具有很强的铁磁性,CrTe2 厚度低至 10 纳米。为了研究它的微磁结构,我们利用低温磁力显微镜(MFM)测量了不同温度和磁场下的磁畴演变。该器件的原始磁畴状态显示出蠕虫状磁畴结构,大小约为 0.6 ~ 0.8 µm。在磁场升高到胁迫磁场并回升到低磁场后,可以诱导和钉住较大的不规则形状磁畴(>1µm)。随温度变化的 MFM 信号显示出良好的均场类铁磁转变,居里温度约为 201.5 K,表明铁磁有序性很强。这种器件有可能应用于未来的磁存储器技术中。
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