Triply Degenerate Semimetal PtBi2 as van der Waals Contact interlayer in Two-Dimensional Transistor

Bohan Wei, Yun Li, Tinghe Yun, Yang Li, Tianhu Gui, Wenzhi Yu, Haoran Mu, Nan Cui, Weiqiang Chen, Shenghuang Lin
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Abstract

The low-energy electronic excitations in topological semimetal yield a plethora of a range of novel physical properties. As a relatively scarce branch, the research of triple degenerate semi-metal is mostly confined to the stage of physical properties and theoretical analysis, there are still challenges in its practical application. This research showcases the first application of the triply degenerate semimetal PtBi2 in electronic devices. Leveraging a van der Waals transfer method, PtBi2 flakes were used as interlayer contacts for metal electrodes and WS2 in transistors. The transistor achieved a switching ratio above 106 and average mobility can reach 85 cm2V-1s-1, meeting integrated circuit requirements. Notably, the excellent air stability of PtBi2 simplifies the device preparation process and provides more stable device performance. Transfer process reduces the Schottky barrier between metal electrodes and semiconductors while avoiding Fermi pinning during metal deposition to achieve excellent contact. This groundbreaking work demonstrates the practical applicability of PtBi2 in the field of electronic devices while opening new avenues for the integration of novel materials in semiconductor technology, setting a precedent for future innovations.
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二维晶体管中作为范德华接触夹层的三重畸变半金属 PtBi2
拓扑半金属中的低能电子激发产生了大量新颖的物理性质。作为一个相对稀缺的分支,三重退化半金属的研究大多局限于物理性质和理论分析阶段,在实际应用中仍面临挑战。本研究首次展示了三重退化半金属铂硼在电子器件中的应用。利用范德华转移方法,PtBi2 片被用作晶体管中金属电极和 WS2 的层间触点。该晶体管的开关比超过 106,平均迁移率达到 85 cm2V-1s-1,符合集成电路的要求。值得注意的是,PtBi2 优异的空气稳定性简化了器件制备过程,并提供了更稳定的器件性能。转移过程降低了金属电极与半导体之间的肖特基势垒,同时避免了金属沉积过程中的费米针销,从而实现了良好的接触。这项开创性工作证明了 PtBi2 在电子器件领域的实用性,同时也为新型材料在半导体技术中的集成开辟了新的途径,为未来的创新开创了先河。
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