Optimization of Ion Beam-Assisted Deposition Process for Y2O3 Film to Enhance Plasma Resistance

Abstract

A ceramic-based plasma etcher window (Lid) requires robust resistance to plasma, especially when exposed to harsh fluorine-based plasma conditions. In this study, a Y₂O₄ film was deposited using e-beam evaporation with ion beam-assisted deposition (IBAD), and the physical properties of the IBAD-based Y₂O₄ coating film were thoroughly examined to enhance the mechanical and chemical resistance of the ceramic part, including the Y₂O₄ film, against etching plasma. The hardness and surface morphology of the IBADbased Y₂O₄ could be precisely controlled by various deposition processing parameters, such as beam voltage, beam current, and Ar/O2 gas ratio. Following the IBAD deposition of the Y₂O₄ film, a plasma etching process (Ar/CF₄ mixture gases with 150 W RF power for 60 minutes) was applied to evaluate the plasma resistance of the deposited Y₂O₄ coating film. The surface morphology characteristics of the Y₂O₄ films were compared using atomic force microscopy, and their grain size was studied through scanning electron microscopy image analysis. Furthermore, a nanoindenter was used to determine the hardness of the Y₂O₄ film. These results suggest that optimizing the IBAD coating process requires an in-depth study that fully considers the correlation between deposition processing parameters and physical properties. This optimization can be instrumental for enhancing the durability of the ceramic part.