R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova, D. B. Istamov, Sh. M. Kuliyev, A. A. Khakimov, A. B. Bobonazarov, A. Z. Rakhmatov
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引用次数: 0
Abstract
The performance of diode temperature sensors depends on their base-depleted region thickness and impurity distribution profile. In this article, we study the boron diffusion process in the thin base region with a thickness of about 1 μm. We show that, for the proposed p+–n–p temperature sensor structure, the impurity distribution in the n region has the form of an asymmetric parabola, with an extreme concentration point shifted towards the “upper” p+ region.
期刊介绍：
Guided by an international editorial board, Low Temperature Physics (LTP) communicates the results of important experimental and theoretical studies conducted at low temperatures. LTP offers key work in such areas as superconductivity, magnetism, lattice dynamics, quantum liquids and crystals, cryocrystals, low-dimensional and disordered systems, electronic properties of normal metals and alloys, and critical phenomena. The journal publishes original articles on new experimental and theoretical results as well as review articles, brief communications, memoirs, and biographies.
Low Temperature Physics, a translation of the copyrighted Journal FIZIKA NIZKIKH TEMPERATUR, is a monthly journal containing English reports of current research in the field of the low temperature physics. The translation began with the 1975 issues. One volume is published annually beginning with the January issues.
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