Zengfa Chen, Wen Yue, Renqiang Zhu, Ming Wang, Xi Zhu, Jinpei Lin, Shuangwu Huang, Xinke Liu
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引用次数: 0
Abstract
In this work, a normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) was demonstrated. The device shows a current on/off ratio of 3.6×10^10, a threshold voltage (VTH) of 1.64 V and a specific on-resistance (RON,SP) of 1.87 mΩ·cm^2. Drain induced channel effects were proposed to explain the change of gate current at different drain voltages. Drain current decline in the output characteristics and the reverse turn-on between drain and source can be explained by the effects. Technology computer aided design (TCAD) was used to simulate the change of the depletion region and confirm the explanation. Detailed analyses of the channel effects provide a reference for the design of new structures. The characteristics at different temperatures were demonstrated to show the stability of threshold voltage and specific on-resistance, which indicates the great potential of application in switching power circuit of vertical GaN JFETs.
期刊介绍：
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
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