Area selective deposition for bottom-up atomic-scale manufacturing

Abstract

Area selective deposition, which streamlines fabrication steps by enhancing precision and reliability, represents a cutting-edge, bottom-up atomic and close-to-atomic scale manufacturing processing. This perspective delves into the essence of area selective atomic layer deposition, exploring the critical mechanisms and additional strategies that enhance the effectiveness of area selective deposition processes. A pivotal emphasis is placed on the thermodynamic and kinetic principles driving nucleation and film growth, coupled with a thorough examination of these underlying processes. Several assisted techniques aiming at improving selectivity and enlarging the selective process window, including surface passivation, activation, deactivation, and defect elimination have been summarized. The introduction of a comprehensive area selective deposition nucleation model illuminates the complex dynamics of area selective deposition, laying a theoretical groundwork for refining deposition processes. The technical and scientific challenges associated with area selective deposition, along with the prospects for its future development and industrial application, form a key part of this perspective. By enabling atomic-level accuracy, area selective deposition paves the way for the fabrication of complex nanostructures, promising significant advancements across the semiconductor industry and a broad spectrum of technological applications, unlocking unparalleled possibilities in precision manufacturing, setting the stage for breakthroughs that will redefine the landscape of modern technology.