Cryogenic CMOS Design for Qubit Control: Present Status, Challenges, and Future Directions [Feature]

Abstract

This article will review recent progress in cryogenic CMOS designs for future scaled quantum computing applications. After introducing the scaling challenges associated with qubit control and readout electronics operating at room temperature, approaches taken to date to cryogenic control electronics design will be discussed, focusing on the most recent relevant publications. Elements of ultra-low power circuit and system design approaches for cryogenic controllers in scaled CMOS nodes (40nm to 14nm) will be reviewed, including a discussion of current state-of-the art cryogenic controller performance and power efficiency. Note that leading designs, when operated as transmon qubit state controllers, have achieved gate error rates in the range of 10-4 to 10-3 achieving spurious free dynamic range (SFDR) of ~40dB while consuming 4-23mW of power per qubit under active control, with power efficiency strongly driven by the complexity of the digital processor integrated in the controller design. These demonstrations, while significant, are just the first steps toward achieving the performance, efficiency, and scalability that will be required for future systems. This review article will discuss fundamental tradeoffs in CMOS cryogenic designs in order to address the needs of future scaled quantum computing systems.