Drag of electron-hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature

Abstract

Drag between the electron-layer and the hole-layer formed in a silicon-on-insulator metal-oxide-semiconductor field-effect-transistor, with the estimated interlayer distance as small as 18 nm, is investigated. The drag resistance is measured at 10 K and mapped on the plane defined by the electron density and hole density. The analysis shows that the Coulomb drag predominates over the competing virtual-phonon drag. The observed drag resistance is as large as 103 - 104 Ω, indicating strong Coulomb interaction between the electron and hole layers.