Nabil Ahmed, M. Razanoelina, M. Hori, Akira Fujiwara, Yukinori Ono
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引用次数: 0
Abstract
Drag between the electron-layer and the hole-layer formed in a silicon-on-insulator metal-oxide-semiconductor field-effect-transistor, with the estimated interlayer distance as small as 18 nm, is investigated. The drag resistance is measured at 10 K and mapped on the plane defined by the electron density and hole density. The analysis shows that the Coulomb drag predominates over the competing virtual-phonon drag. The observed drag resistance is as large as 103 - 104 Ω, indicating strong Coulomb interaction between the electron and hole layers.
期刊介绍：
ACS Applied Bio Materials is an interdisciplinary journal publishing original research covering all aspects of biomaterials and biointerfaces including and beyond the traditional biosensing, biomedical and therapeutic applications.
The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrates knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important bio applications. The journal is specifically interested in work that addresses the relationship between structure and function and assesses the stability and degradation of materials under relevant environmental and biological conditions.
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