Effect of Potassium Ferrocyanide on CMP Performance of Ruthenium in H2O2-based Slurries

Abstract

As feature size of integrated circuits develops to 7 nm, ruthenium is considered the preferred material to replace traditional Ta/TaN barrier layers. Ruthenium can be electroplated without the need for copper seed crystal layers. However, the removal of the ruthenium barrier layer during the polishing process must be addressed. Therefore, this article studies the promoting effect of potassium ferrocyanide (K4Fe(CN)6) and hydrogen peroxide (H2O2) containing silicon slurries on the rate of ruthenium chemical mechanical polishing. Experiments have shown that the polishing rate of ruthenium is significantly improved by the combined action of K4Fe(CN)6 and H2O2. The stronger hydroxyl radicals is the main factor in achieving a high Ru polishing rate, which accelerates the dissolution and removal of Ru layers by converting the hard Ru layer into softer RuO2 and RuO3 oxide layers. The dependencies of the chemical properties (such as electrochemical impedance spectroscopy and surface morphology) proved that the CMP mechanism using Fenton reaction principally performs chemical oxidation and etching dominant CMP simultaneously. This study is expected to provide ideas and insights for the development and design of a new alkaline polishing solution for ruthenium, which is beneficial for the wider application of ruthenium in the field of integrated circuits.