Continuous wave laser-assisted evaporation of halide perovskite thin films from a single stoichiometric source

Naga Prathibha Jasti, S. Tirosh, Ansuman Halder, Eti Teblum, David Cahen
{"title":"Continuous wave laser-assisted evaporation of halide perovskite thin films from a single stoichiometric source","authors":"Naga Prathibha Jasti, S. Tirosh, Ansuman Halder, Eti Teblum, David Cahen","doi":"10.1116/6.0003607","DOIUrl":null,"url":null,"abstract":"We report continuous wave laser-assisted evaporation (CLE), a thin film deposition technique that yields phase-pure and stoichiometric thin films of halide perovskites (HaPs) from stoichiometric HaP targets. We use methylammonium lead bromide (MAPbBr3) to demonstrate the ability to grow with CLE well-oriented and smooth thin films on various substrates. Further, we show the broader applicability of CLE by preparing films of several other 3D HaP compounds, viz., methylammonium lead iodide, formamidinium lead bromide, and a 2D one, butylammonium lead iodide. CLE is a single-source, solvent-free, room-temperature process that needs only roughing pump vacuum; it allows the deposition of hybrid organic-inorganic compound films without needing post-thermal treatment or an additional organic precursor source to yield the intended product. The resulting films are polycrystalline and highly oriented. All these features, and the fact that one stoichiometric source serves as the target, make for an attractive, potentially scalable dry deposition approach.","PeriodicalId":509398,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We report continuous wave laser-assisted evaporation (CLE), a thin film deposition technique that yields phase-pure and stoichiometric thin films of halide perovskites (HaPs) from stoichiometric HaP targets. We use methylammonium lead bromide (MAPbBr3) to demonstrate the ability to grow with CLE well-oriented and smooth thin films on various substrates. Further, we show the broader applicability of CLE by preparing films of several other 3D HaP compounds, viz., methylammonium lead iodide, formamidinium lead bromide, and a 2D one, butylammonium lead iodide. CLE is a single-source, solvent-free, room-temperature process that needs only roughing pump vacuum; it allows the deposition of hybrid organic-inorganic compound films without needing post-thermal treatment or an additional organic precursor source to yield the intended product. The resulting films are polycrystalline and highly oriented. All these features, and the fact that one stoichiometric source serves as the target, make for an attractive, potentially scalable dry deposition approach.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
从单一化学计量源连续波激光辅助蒸发卤化物包晶体薄膜
我们报告了连续波激光辅助蒸发(CLE)技术,这是一种薄膜沉积技术,可从符合化学计量的 HaP 靶件中获得相纯且符合化学计量的卤化物包晶(HaPs)薄膜。我们使用甲基溴化铅铵 (MAPbBr3) 演示了利用 CLE 在各种基底上生长取向良好、光滑薄膜的能力。此外,我们还通过制备其他几种三维 HaP 化合物(即甲基碘化铅铵、甲脒溴化铅以及二维化合物丁基碘化铅铵)的薄膜,展示了 CLE 的广泛适用性。CLE 是一种单源、无溶剂、室温工艺,只需粗抽真空;它可以沉积有机-无机混合化合物薄膜,无需后热处理或额外的有机前驱体源,即可获得预期产品。沉积出的薄膜是多晶体且具有高度取向性。所有这些特点,以及将一个化学计量源作为目标的事实,使得这种干沉积方法具有吸引力和潜在的可扩展性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Impact of sputtering and redeposition on the morphological profile evolution during ion-beam etching of blazed gratings Nitrogen-incorporated tetrahedral amorphous carbon optically transparent thin film electrode Effect of plasma discharge pulse length for GaN film crystallinity on sapphire substrate by high density convergent plasma sputtering device Inhibition of thermochemical erosion by different coatings attached to the barrel chamber at high temperature and supersonic environments Influence of high-temperature thermal annealing on paramagnetic point defects in silicon-rich silicon nitride films formed in a single-wafer-type low-pressure chemical vapor deposition reactor
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1