Optimizing luminescent properties of ZnO: Er3+ through temperature and dopant variation: XRD and emission spectroscopy studies

Abstract

This study focuses on optimizing the synthesis conditions for the luminescent properties of ZnO:Er3[Formula: see text], a key step toward improving its applicability in optoelectronics. X-ray diffraction (XRD) patterns at [Formula: see text]C with Er3[Formula: see text] dopant concentrations (1, 3 and 5[Formula: see text]wt.%) show the preservation of the crystalline phase of ZnO, indicating that the dopants did not affect the structural integrity. Luminescence properties were observed in ZnO with 1[Formula: see text]wt.% erbium doping at 900–[Formula: see text]C, with the sample at [Formula: see text]C exhibiting the highest emission peak at 533[Formula: see text]nm. The optimal conditions for significant luminescence were identified at [Formula: see text]C, with 5[Formula: see text]wt.% Er3[Formula: see text] showing the most pronounced effect. The practical implications of the achievement of optimal luminescence in ZnO:Er3[Formula: see text] are profound for optoelectronics. These conditions are critical for efficient light-emitting devices, particularly in applications such as light-emitting diodes (LEDs) and lasers, where emission characteristics have a direct impact on performance. In addition, the enhanced luminescence holds great promise for sensors, especially in biomedical and environmental monitoring, as well as in quantum technologies. It contributes to the advancement of quantum sensors and quantum computing applications. This research provides a basis for tailoring the properties of ZnO:Er3[Formula: see text] for specific applications by identifying optimal luminescence conditions at different dopant concentrations. While the identification of optimal conditions has been successful, further research is essential to unravel the underlying mechanisms at the atomic and molecular levels. Overcoming these challenges and exploring additional applications will be critical to realizing the practical impact of these findings in various technological fields, as the study paves the way for advances in optoelectronics, sensing, and quantum information processing.