Absorber layer improvement and performance analysis of CIGS thin-film solar cell

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2024-05-15 DOI:10.15251/jor.2024.203.309
A. Khamis, N. I. M. Rodzi, N. Z. A. Naharuddin
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Abstract

CIGS has shown significant potential for cost-effective and efficient photovoltaic applications, with efficiency often exceeding 20%. However, further improvements in cell performance are needed to reduce production costs. Thus, this study proposes an ultra-thin structure for CIGS solar cells by modifying the absorber layer thickness and composition. SCAPS software was used to evaluate the performance of the proposed design, such as open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF%), and conversion efficiency (ŋ%). Results showed that ultra-thin solar cells with the proposed GnP and CGS absorber layers are ideal due to their greater ŋ%, 25.33%.
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CIGS 薄膜太阳能电池吸收层的改进和性能分析
铜铟镓硒电池在具有成本效益和高效率的光伏应用方面已显示出巨大的潜力,其效率通常超过 20%。然而,要降低生产成本,还需要进一步提高电池性能。因此,本研究通过改变吸收层的厚度和成分,提出了一种 CIGS 太阳能电池的超薄结构。研究使用 SCAPS 软件评估了拟议设计的性能,如开路电压(Voc)、短路电流(Jsc)、填充因子(FF%)和转换效率(ŋ%)。结果表明,采用建议的 GnP 和 CGS 吸收层的超薄太阳能电池具有更高的转换效率(25.33%),是理想的太阳能电池。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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