Influence of Temperature of Silicon Dioxide Powder Annealing on the Aluminum-Induced Crystallization of Polycrystalline Silicon

IF 0.6 4区 化学 Q4 CHEMISTRY, APPLIED Russian Journal of Applied Chemistry Pub Date : 2024-05-21 DOI:10.1134/S1070427223090021
V. I. Pavlenko, A. I. Gorodov, N. I. Cherkashina, D. A. Ryzhikh, A. Yu. Ruchii
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Abstract

The phase composition, structure, and size of particles and agglomerates formed by annealing of the powder obtained from hydrophobizing organosilicon liquid in the presence of aluminum powder (5–10 wt %) were studied by X-ray diffraction, Fourier IR spectroscopy, and laser granulometry. The annealing temperature varied from 550 to 700°С influences the mean size of the individual particles, and the aluminum content influences the agglomerate size. An increase in the heat treatment temperature leads to a decrease in the mean diameter of separate particles. The samples containing 10% aluminum powder have the largest agglomerate size. In turn, the formation of the polycrystalline silicon phase from the amorphous silica-containing powder system in the temperature range of solid-phase reactions depends on the particle and agglomerate size. To obtain polycrystalline silicon from samples containing coarser agglomerates, it is necessary to raise the annealing temperature at equal process time. The minimal annealing temperature for the start of the polycrystalline silicon formation was 550°С, and the required amount of aluminum powder was 5%.

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二氧化硅粉末退火温度对铝诱导多晶硅结晶的影响
摘要 通过 X 射线衍射、傅立叶红外光谱和激光粒度仪研究了在铝粉(5-10 wt %)存在下,对疏水有机硅液进行退火处理所得到的粉末所形成的颗粒和团聚体的相组成、结构和尺寸。550 至 700°С 的退火温度会影响单个颗粒的平均尺寸,而铝含量则会影响团聚体的尺寸。热处理温度升高会导致独立颗粒的平均直径减小。含 10% 铝粉的样品的团聚体尺寸最大。反过来,在固相反应温度范围内,从含无定形二氧化硅粉末体系中形成多晶硅相取决于颗粒和团聚体的大小。要从含有较粗团聚体的样品中获得多晶硅,必须在相同的加工时间内提高退火温度。开始形成多晶硅的最低退火温度为 550°С,所需的铝粉量为 5%。
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来源期刊
CiteScore
1.60
自引率
11.10%
发文量
63
审稿时长
2-4 weeks
期刊介绍: Russian Journal of Applied Chemistry (Zhurnal prikladnoi khimii) was founded in 1928. It covers all application problems of modern chemistry, including the structure of inorganic and organic compounds, kinetics and mechanisms of chemical reactions, problems of chemical processes and apparatus, borderline problems of chemistry, and applied research.
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