Enhanced anchor quality factor of an aluminium nitride-on-silicon MEMS resonator using support tethers based on compound leaf-shaped one dimensional phononic crystal

Thi Dep Ha
{"title":"Enhanced anchor quality factor of an aluminium nitride-on-silicon MEMS resonator using support tethers based on compound leaf-shaped one dimensional phononic crystal","authors":"Thi Dep Ha","doi":"10.1007/s00542-024-05697-w","DOIUrl":null,"url":null,"abstract":"<p>Energy dissipation through support structures is one of the dominant loss mechanisms in MEMS resonators, which results in a very low quality (<i>Q</i>) factor. This paper aims to propose a one-dimensional phononic crystal (PnC) structure, namely a compound leaf-shaped phononic crystal (PnC) strip (TYPE_PROP), as anchor tethers to boost the anchor quality factor (<span>\\(Q_{anchor}\\)</span>) of a thin-film aluminium nitride (AlN)-on-silicon (Si) MEMS resonator. Thus, its Q can achieve a superior value. The operating frequency and mode of the resonator are 123.49 MHz and a length extensional (LE) mode, respectively. This frequency falls into the band gap frequency range of 52 MHz of the TYPE_PROP. The <span>\\(Q_{anchor}\\)</span> of the resonator with unit cell number variation of the TYPE_PROP tether is studied. From these investigations, the effectiveness of the tether in reducing/eliminating the anchor energy loss is evaluated. Furthermore, this <span>\\(Q_{anchor}\\)</span> is also compared to the same resonator structure with two conventional tether types. Additionally, the variation of the band gaps’ properties versus the dimensional parameters of the TYPE_PROP are also evaluated. The COMSOL Multiphysics platform based numerical results demonstrate that the <span>\\(Q_{anchor}\\)</span> of the resonator with the TYPE_PROP based tethers achieves superior values compared to its counterparts. Specifically, this value is about 5.42 <span>\\(\\times\\)</span> <span>\\(10^{12}\\)</span> and 23.74 times higher than that of the TYPE_CON1 and TYPE_CON2, respectively. The <span>\\(Q_{anchor}\\)</span> improvement of the LE mode MEMS resonator using the TYPE_PROP achieves higher values than that using two conventional tether configurations.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"10 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microsystem Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/s00542-024-05697-w","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Energy dissipation through support structures is one of the dominant loss mechanisms in MEMS resonators, which results in a very low quality (Q) factor. This paper aims to propose a one-dimensional phononic crystal (PnC) structure, namely a compound leaf-shaped phononic crystal (PnC) strip (TYPE_PROP), as anchor tethers to boost the anchor quality factor (\(Q_{anchor}\)) of a thin-film aluminium nitride (AlN)-on-silicon (Si) MEMS resonator. Thus, its Q can achieve a superior value. The operating frequency and mode of the resonator are 123.49 MHz and a length extensional (LE) mode, respectively. This frequency falls into the band gap frequency range of 52 MHz of the TYPE_PROP. The \(Q_{anchor}\) of the resonator with unit cell number variation of the TYPE_PROP tether is studied. From these investigations, the effectiveness of the tether in reducing/eliminating the anchor energy loss is evaluated. Furthermore, this \(Q_{anchor}\) is also compared to the same resonator structure with two conventional tether types. Additionally, the variation of the band gaps’ properties versus the dimensional parameters of the TYPE_PROP are also evaluated. The COMSOL Multiphysics platform based numerical results demonstrate that the \(Q_{anchor}\) of the resonator with the TYPE_PROP based tethers achieves superior values compared to its counterparts. Specifically, this value is about 5.42 \(\times\) \(10^{12}\) and 23.74 times higher than that of the TYPE_CON1 and TYPE_CON2, respectively. The \(Q_{anchor}\) improvement of the LE mode MEMS resonator using the TYPE_PROP achieves higher values than that using two conventional tether configurations.

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利用基于复合叶形一维声子晶体的支撑系链提高硅基氮化铝 MEMS 谐振器的锚品质因数
通过支撑结构耗散能量是 MEMS 谐振器的主要损耗机制之一,这会导致极低的品质(Q)系数。本文旨在提出一种一维声子晶体(PnC)结构,即复合叶形声子晶体(PnC)条(TYPE_PROP),作为锚系物来提高薄膜氮化铝(AlN)-硅(Si)MEMS 谐振器的锚品质因数(Q)。因此,它的 Q 值可以达到很高的水平。谐振器的工作频率和模式分别为 123.49 MHz 和长度扩展(LE)模式。该频率属于 TYPE_PROP 的 52 MHz 带隙频率范围。研究了谐振器的 Q_{anchor}\ (Q_{chor}\)随 TYPE_PROP 系链的单元数变化的情况。通过这些研究,评估了系链在减少/消除锚能量损失方面的有效性。此外,还将该\(Q_{anchor}\)与具有两种传统系链类型的相同谐振器结构进行了比较。此外,还评估了带隙特性随 TYPE_PROP 尺寸参数的变化。基于 COMSOL Multiphysics 平台的数值结果表明,采用基于 TYPE_PROP 的系绳的谐振器的 Q 值比同类产品要高。具体来说,该值分别是 TYPE_CON1 和 TYPE_CON2 的 5.42 倍和 23.74 倍。使用 TYPE_PROP 的 LE 模式 MEMS 谐振器的 \(Q_{anchor}\) 改进值高于使用两种传统系绳配置的改进值。
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