Porous GaP/g-C3N4 Photoanode for Enhanced Hydrogen Production

IF 2.6 4区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY ChemNanoMat Pub Date : 2024-05-31 DOI:10.1002/cnma.202400024
Dr. Hao Yuan, Prof. Maojun Zheng, Dr. Ying Yang, Jiaheng Gao, Hao Chen, Yunlong Fan, Yinghong Li, Prof. Li Ma, Guohua Wang, Prof. Wenzhong Shen
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Abstract

The g-C3N4 decorated porous gallium phosphide have been fabricated by a facile electrophoretic deposition (EPD) process. The morphology, element composition and light absorption of the GaP/g-C3N4 photoanode were observed using field-emission scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet and visible spectrophotometer, respectively. When acting as photoanode, porous GaP/g-C3N4 serves as a direct Z-scheme system, where photogenerated holes in GaP are expended by electrons generated from the g-C3N4, inhibiting the corrosion of GaP. Therefore, the porous GaP/g-C3N4 showed a larger photocurrent density, which is 2.1 times as large as that of the porous GaP without g-C3N4, and a more stable photocurrent density for over 10000 s (at 0 V vs RHE). Thus, this work delivers a practical way to improve the photoelectrochemical stability and property of III–V semiconductor materials, which could be used in solar energy conversion fields.

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用于增强氢气生产的多孔 GaP/g-C3N4 光阳极
通过简便的电泳沉积(EPD)工艺制备出了 g-C3N4 装饰多孔磷化镓。利用场发射扫描电子显微镜、X射线光电子能谱、紫外分光光度计和可见分光光度计分别观察了GaP/g-C3N4光阳极的形貌、元素组成和光吸收。在充当光阳极时,多孔 GaP/g-C3N4 直接充当 Z 型体系,GaP 中的光生空穴被 g-C3N4 产生的电子消耗,从而抑制了 GaP 的腐蚀。因此,多孔 GaP/g-C3N4 显示出更大的光电流密度,是不含 g-C3N4 的多孔 GaP 的 2.1 倍,并且在 10000 秒以上(0 V 对比 RHE 时)光电流密度更加稳定。因此,这项工作为提高 III-V 族半导体材料的光电化学稳定性和性能提供了一条实用途径,可用于太阳能转换领域。
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来源期刊
ChemNanoMat
ChemNanoMat Energy-Energy Engineering and Power Technology
CiteScore
6.10
自引率
2.60%
发文量
236
期刊介绍: ChemNanoMat is a new journal published in close cooperation with the teams of Angewandte Chemie and Advanced Materials, and is the new sister journal to Chemistry—An Asian Journal.
期刊最新文献
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