Design and Analysis of High Performance FinFET-Based Linear Feedback Shift Register for Cryptography Applications

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Nanoelectronics and Optoelectronics Pub Date : 2024-06-01 DOI:10.1166/jno.2024.3613
M. Susaritha, J. Senthilkumar
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Abstract

Nowadays, all the elements of our surrounding is occupied by electronics. Electronics occupies major role on our day today life. Electronics device integration on a single chip enhances performance in terms of speed, low-power circuits, and area. Integration of VLSI provides better scalability and reliability. This research paper focused on the implementation of Linear feedback shift registers (LFSR) using FinFET techniques at the layout level for various applications, including cryptography. FinFETs are highlighted as a replacement for CMOS technology, offering advantages such as improved performance in terms of speed, low-power circuits, and area. Linear feedback shift registers are commonly used in digital systems and cryptography for generating pseudo-random sequences. The use of FinFET technology in the layout level suggests an interest in exploring advanced semiconductor technologies to enhance the performance of these circuits. The paper appears to cover different design methods of LFSRs, which could include aspects like circuit optimization, power efficiency, and reliability. The integration of electronics on a single chip, particularly with FinFET technology, is noted for its potential to provide better scalability and reliability. The first architecture is created using bulk CMOS techniques; whereas the second is constructed using two fin FinFET LFSRs. Using the Microwind designing tool, the third technique is developed with a 3-fin FinFET LFSR. It provides a solution for a novel FinFET architecture that implements LFSR. When comparing CMOS and FinFET circuit designs for LFSR, the latter achieves superior performance in terms of area and power efficiency. An analysis is conducted on the design techniques and performance of CMOS LFSR, 2 fin FinFET based LFSR, and 3 fin FinFET. According to the experimental findings, the CMOS-based LFSR uses 1.243 mW of power; the FinFET-based LFSR uses 90.47 μW, and the two fin FinFET LFRS uses 0.254 mW.
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面向密码学应用的基于 FinFET 的高性能线性反馈移位寄存器的设计与分析
如今,我们周围的所有元素都被电子产品占据。电子产品在我们的日常生活中扮演着重要角色。将电子器件集成在单个芯片上,可以提高速度、低功耗电路和面积方面的性能。超大规模集成电路的集成提供了更好的可扩展性和可靠性。本研究论文的重点是在布局层面利用 FinFET 技术实现线性反馈移位寄存器 (LFSR),用于包括密码学在内的各种应用。FinFET 作为 CMOS 技术的替代品,具有速度更快、低功耗电路和面积更大等优势。线性反馈移位寄存器常用于数字系统和密码学中生成伪随机序列。在布局层面使用 FinFET 技术表明,人们有兴趣探索先进的半导体技术,以提高这些电路的性能。论文似乎涵盖了 LFSR 的不同设计方法,其中可能包括电路优化、能效和可靠性等方面。在单个芯片上集成电子器件,特别是采用 FinFET 技术,因其具有提供更好的可扩展性和可靠性的潜力而备受关注。第一种架构采用了体CMOS技术,而第二种架构则采用了两个鳍式FinFET LFSR。利用 Microwind 设计工具,第三种技术采用 3 片鳍式 FinFET LFSR 进行开发。它为实现 LFSR 的新型 FinFET 架构提供了解决方案。在比较 CMOS 和 FinFET LFSR 电路设计时,后者在面积和功率效率方面性能更优。本文对 CMOS LFSR、基于 2 鳍片 FinFET 的 LFSR 和 3 鳍片 FinFET 的设计技术和性能进行了分析。实验结果表明,基于 CMOS 的 LFSR 功耗为 1.243 mW;基于 FinFET 的 LFSR 功耗为 90.47 μW,而两鳍式 FinFET LFRS 功耗为 0.254 mW。
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来源期刊
Journal of Nanoelectronics and Optoelectronics
Journal of Nanoelectronics and Optoelectronics 工程技术-工程:电子与电气
自引率
16.70%
发文量
48
审稿时长
12.5 months
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