Ivan Vikulin, Oleksandr Nazarenko, Lidiya Vikulina, Pavlo Markolenko
{"title":"Effect of Penetrating Radiation on Sensitivity of Magnetotransistors","authors":"Ivan Vikulin, Oleksandr Nazarenko, Lidiya Vikulina, Pavlo Markolenko","doi":"10.3103/s0735272723060055","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An experimental study of the effect of radiation emissions (neutrons, gamma radiation) on the sensitivity of industrial bipolar <i>n-p-n</i> magnetotransistors has been carried out. It has been shown that neutron irradiation leads to defects in the structure, which reduces the effective lifetime of the injected charge carriers and decreases the magnetosensitivity. Gamma radiation with increasing intensity first destroys the surface structural defects and increases the lifetime of carriers and magnetoresponsiveness, and then penetrates deeper forming defects and reducing magnetoresponsiveness. This makes it possible to use gamma radiation with an intensity of up to 10<sup>7</sup> R as a technological method of increasing magnetosensitivity.</p>","PeriodicalId":52470,"journal":{"name":"Radioelectronics and Communications Systems","volume":"164 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Radioelectronics and Communications Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3103/s0735272723060055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
An experimental study of the effect of radiation emissions (neutrons, gamma radiation) on the sensitivity of industrial bipolar n-p-n magnetotransistors has been carried out. It has been shown that neutron irradiation leads to defects in the structure, which reduces the effective lifetime of the injected charge carriers and decreases the magnetosensitivity. Gamma radiation with increasing intensity first destroys the surface structural defects and increases the lifetime of carriers and magnetoresponsiveness, and then penetrates deeper forming defects and reducing magnetoresponsiveness. This makes it possible to use gamma radiation with an intensity of up to 107 R as a technological method of increasing magnetosensitivity.
期刊介绍:
Radioelectronics and Communications Systems covers urgent theoretical problems of radio-engineering; results of research efforts, leading experience, which determines directions and development of scientific research in radio engineering and radio electronics; publishes materials of scientific conferences and meetings; information on scientific work in higher educational institutions; newsreel and bibliographic materials. Journal publishes articles in the following sections:Antenna-feeding and microwave devices;Vacuum and gas-discharge devices;Solid-state electronics and integral circuit engineering;Optical radar, communication and information processing systems;Use of computers for research and design of radio-electronic devices and systems;Quantum electronic devices;Design of radio-electronic devices;Radar and radio navigation;Radio engineering devices and systems;Radio engineering theory;Medical radioelectronics.