Stochastic simulation of exciton transport in semiconductor heterostructures

Abstract

Stochastic simulation algorithm for solving exciton transport in a 3D layered semiconductor heterostructure is developed. The problem is governed by a transient drift-diffusion-recombination equation with Dirichlet and Neumann mixed boundary conditions. The semiconductor is represented as an infinite multilayer of finite thickness along the transverse coordinate z. The multilayer is composed by a set of sublayers of different materials so that the excitons have different diffusion and recombination coefficients in each layer. Continuity of solutions and fluxes at the plane interfaces between layers are imposed. The stochastic simulation algorithm solves the transport problem by tracking exciton trajectories in accordance with the probability distributions represented through the Green function of the problem in each sublayer. The method is meshless, the excitons jump only over the plane boundaries of the layers. This explains the high efficiency of the method. Simulation results for transport problems with different mixed boundary conditions are presented.