{"title":"Front Cover: Optical Characterization of InGaN Quantum Structures at the Nanoscale (Adv. Quantum Technol. 6/2024)","authors":"Wai Yuen Fu, Hoi Wai Choi","doi":"10.1002/qute.202470016","DOIUrl":null,"url":null,"abstract":"<p>In article number 2300335, Wai Yuen Fu and Hoi Wai Choi review nano-optical techniques for characterising InGaN quantum wells. The study contrasts scanning near-field optical microscopy (SNOM) with electron microscopy-cathodoluminescence (EM-CL), emphasising their crucial roles in revealing the structural and optical properties of InGaN quantum wells. The cover image illustrates these techniques in action, exciting luminescence from the quantum well within the atomic structure of the GaN/InGaN/GaN heterostructure.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":72073,"journal":{"name":"Advanced quantum technologies","volume":null,"pages":null},"PeriodicalIF":4.4000,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/qute.202470016","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced quantum technologies","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/qute.202470016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
In article number 2300335, Wai Yuen Fu and Hoi Wai Choi review nano-optical techniques for characterising InGaN quantum wells. The study contrasts scanning near-field optical microscopy (SNOM) with electron microscopy-cathodoluminescence (EM-CL), emphasising their crucial roles in revealing the structural and optical properties of InGaN quantum wells. The cover image illustrates these techniques in action, exciting luminescence from the quantum well within the atomic structure of the GaN/InGaN/GaN heterostructure.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
