Xiaohui Shi*, Lulu Du, Ke Xiao, Qingming Ping, Xiaoyan Sun and Wenbo Mi,
{"title":"Demonstrating Current-Driven Anomalous Hall Resistivity in Epitaxial Pt(3 nm)/Fe4N(≤6 nm)/MgO Heterostructures toward Spintronic Devices","authors":"Xiaohui Shi*, Lulu Du, Ke Xiao, Qingming Ping, Xiaoyan Sun and Wenbo Mi, ","doi":"10.1021/acsanm.4c02261","DOIUrl":null,"url":null,"abstract":"<p >Current-induced spin–orbit torque (SOT) in heavy metal/ferromagnets can be used to manipulate the magnetization and electronic transport properties for logic and memory operations. Significantly, Fe<sub>4</sub>N shows an in-plane magnetic anisotropy at larger thicknesses but enters a noncollinear magnetic phase at suitably nanoscale thicknesses. Here, the electronic transport properties of Pt(3 nm)/Fe<sub>4</sub>N(<i>t</i><sub>Fe4N</sub> ≤ 6 nm)/MgO(sub)structures were investigated. Current-driven anomalous Hall resistivity ρ<sub>AHE</sub> changes appear due to SOT. Moreover, sign reversal of Hall resistivity ρ<sub><i>xy</i></sub> occurs due to the competition between the magnetic proximity effect and inverse spin Hall effect. A model based on the above contributions was built to demonstrate how torque changes with increasing charge current and why sign reversal of ρ<sub><i>xy</i></sub> occurs.</p>","PeriodicalId":6,"journal":{"name":"ACS Applied Nano Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Nano Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsanm.4c02261","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Current-induced spin–orbit torque (SOT) in heavy metal/ferromagnets can be used to manipulate the magnetization and electronic transport properties for logic and memory operations. Significantly, Fe4N shows an in-plane magnetic anisotropy at larger thicknesses but enters a noncollinear magnetic phase at suitably nanoscale thicknesses. Here, the electronic transport properties of Pt(3 nm)/Fe4N(tFe4N ≤ 6 nm)/MgO(sub)structures were investigated. Current-driven anomalous Hall resistivity ρAHE changes appear due to SOT. Moreover, sign reversal of Hall resistivity ρxy occurs due to the competition between the magnetic proximity effect and inverse spin Hall effect. A model based on the above contributions was built to demonstrate how torque changes with increasing charge current and why sign reversal of ρxy occurs.
期刊介绍:
ACS Applied Nano Materials is an interdisciplinary journal publishing original research covering all aspects of engineering, chemistry, physics and biology relevant to applications of nanomaterials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important applications of nanomaterials.