Transformation from dendritic to triangular growth of WS2 via NaCl assisted low-pressure chemical vapor deposition

H. Pokhrel, Joseph Anthony Duncan, Bryson Krause, T. B. Hoang, S. D. Pollard
{"title":"Transformation from dendritic to triangular growth of WS2 via NaCl assisted low-pressure chemical vapor deposition","authors":"H. Pokhrel, Joseph Anthony Duncan, Bryson Krause, T. B. Hoang, S. D. Pollard","doi":"10.1116/6.0003543","DOIUrl":null,"url":null,"abstract":"Tungsten disulfide (WS2) is a promising two-dimensional material owing to its remarkable optical, electronic, and electrocatalytic behavior. However, morphology of this material varies significantly with growth conditions. In this work, we use salt-assisted low-pressure chemical vapor deposition (LP-CVD) to grow WS2 crystals of a few layers reaching over 50 μm in size on SiO2/Si substrates. We observe a transition from large, dendritic to triangular growth by systematically varying the amount of the NaCl promotor material as well as the presence of intermediate Wx+ states for low NaCl amounts. The transition from dendritic to triangular growth is discussed in the context of diffusion limited aggregation, with the transformation likely being the result of reduced formation energy, owing to increasing concentrations of transition metal oxyhalides for given precursor quantities. These results help to clarify the role of effects of the NaCl precursor in salt-assisted LP-CVD of WS2 and provide a new means to tune the morphology of this material.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":" 0","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003543","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Tungsten disulfide (WS2) is a promising two-dimensional material owing to its remarkable optical, electronic, and electrocatalytic behavior. However, morphology of this material varies significantly with growth conditions. In this work, we use salt-assisted low-pressure chemical vapor deposition (LP-CVD) to grow WS2 crystals of a few layers reaching over 50 μm in size on SiO2/Si substrates. We observe a transition from large, dendritic to triangular growth by systematically varying the amount of the NaCl promotor material as well as the presence of intermediate Wx+ states for low NaCl amounts. The transition from dendritic to triangular growth is discussed in the context of diffusion limited aggregation, with the transformation likely being the result of reduced formation energy, owing to increasing concentrations of transition metal oxyhalides for given precursor quantities. These results help to clarify the role of effects of the NaCl precursor in salt-assisted LP-CVD of WS2 and provide a new means to tune the morphology of this material.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
通过氯化钠辅助低压化学气相沉积实现 WS2 从树枝状生长到三角形生长的转变
二硫化钨(WS2)具有卓越的光学、电子和电催化性能,是一种前景广阔的二维材料。然而,这种材料的形态会随着生长条件的不同而发生显著变化。在这项研究中,我们使用盐辅助低压化学气相沉积(LP-CVD)技术,在二氧化硅/硅基底上生长出几层大小超过 50 μm 的 WS2 晶体。通过系统地改变氯化钠促进剂材料的用量以及低氯化钠用量时中间 Wx+ 状态的存在,我们观察到了从大型树枝状生长到三角形生长的过渡。在扩散受限聚集的背景下讨论了从树枝状生长到三角形生长的转变,这种转变很可能是形成能量降低的结果,因为在给定前驱体数量的情况下,过渡金属氧卤化物的浓度不断增加。这些结果有助于澄清氯化钠前驱体在盐辅助 LP-CVD 的 WS2 中的作用,并为调整这种材料的形态提供了一种新方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Measurements of atomic hydrogen recombination coefficients and the reduction of Al2O3 using a heat flux sensor Extension of ion-neutral reactive collision model DNT+ to polar molecules based on average dipole orientation theory Molecular beam epitaxy of Pd-Fe graded alloy films for standing spin waves control Revealing the controlling mechanisms of atomic layer etching for high-k dielectrics in conventional inductively coupled plasma etching tool Introduction to reproducible laboratory hard x-ray photoelectron spectroscopy
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1