Future of plasma etching for microelectronics: Challenges and opportunities

G. Oehrlein, Stephan M. Brandstadter, Robert L. Bruce, Jane P. Chang, Jessica C. DeMott, Vincent M. Donnelly, Rémi Dussart, Andreas Fischer, R. Gottscho, S. Hamaguchi, M. Honda, Masaru Hori, Kenji Ishikawa, Steven G. Jaloviar, K. J. Kanarik, K. Karahashi, Akiteru Ko, Hiten Kothari, Nobuyuki Kuboi, M. Kushner, T. Lill, P. Luan, Ali Mesbah, Eric Miller, Shoubhanik Nath, Y. Ohya, M. Omura, C. Park, John Poulose, Shahid Rauf, M. Sekine, Taylor G. Smith, Nathan Stafford, Theo Standaert, P. Ventzek
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Abstract

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.
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微电子等离子体蚀刻的未来:挑战与机遇
等离子刻蚀是当前微电子工业所需的一项重要半导体制造技术。等离子刻蚀技术与光刻图形、薄膜形成方法等技术一起,不断发展,以满足微电子工业急剧增长的需求,从而推动现代社会的发展。目前,等离子刻蚀技术正面临着前所未有的变革,这是由多种因素造成的,包括向三维(3D)器件架构的积极过渡、接近原子级临界尺寸的工艺精度、新材料的引入、硅器件的基本限制以及后 CMOS 方法的并行发展。微电子产业的迅猛发展凸显了它在应对重大社会挑战方面的作用,包括相关能源使用的可持续性、半导体制造相关的温室气体排放等问题。本文的目的是帮助定义等离子刻蚀所面临的挑战,并指出有效的等离子刻蚀技术方案,这些方案可能会在未来的微电子制造业中发挥至关重要的作用。挑战伴随着重要的新机遇,包括将实验与机器学习/人工智能等各种计算方法相结合,以及计算方法的进步,包括通过混合/耦合模型实现物理蚀刻室的数字双胞胎。这些前景可以为微电子行业过去 50 年的等离子刻蚀发展过程中无法解决的问题提供创新解决方案。为了详细阐述这些前景,本文汇集了多位专家对不同主题的观点,这些主题将塑造未来微电子制造业的等离子刻蚀技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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