Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode

Hoon-Ki Lee, V. Janardhanam, Woojin Chang, K. Cho, Chel-Jong Choi, Jae Kyoung Mun
{"title":"Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode","authors":"Hoon-Ki Lee, V. Janardhanam, Woojin Chang, K. Cho, Chel-Jong Choi, Jae Kyoung Mun","doi":"10.1116/6.0003608","DOIUrl":null,"url":null,"abstract":"In this study, the (001) β-Ga2O3 surface was dry etched employing the inductively coupled plasma-reactive ion etching (ICP-RIE) system, and Au/Ni/β-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on the etched surface. The impact of ion bombardment on the (001) β-Ga2O3 surface during dry etching and its effect on current-voltage (I–V) characteristics and breakdown voltage was investigated. The forward current at higher bias decreased with increasing temperature due to the fact that the higher temperatures cause them to be less mobile owing to the scattering effects that reduce the on-current. The temperature-dependent I–V characterization of the Au/Ni/β-Ga2O3 SBD revealed a strong temperature dependence of barrier height and ideality factor associated with the barrier height inhomogeneity at the interface between Ni and β-Ga2O3. Analysis of the barrier height inhomogeneities with the assumption of Gaussian distribution of barrier heights confirmed the presence of a double Gaussian barrier distribution having mean barrier heights of 0.71 and 1.21 eV in the temperature range of (83–158) and (183–283 K), respectively. The Richardson constant value obtained from the modified Richardson plot interpreted with the consideration of Gaussian distribution of barrier heights closely matched with the theoretical value of β-Ga2O3. The fabricated Au/Ni/β-Ga2O3 SBD showed consistent breakdown voltage in the range of 670–695 V over repeated measurements with a time interval of 1 min without exhibiting any damage. However, after an initial breakdown voltage measurement, repeating the measurement with a 30 s interval led to an exponential increase in current, leading to the destruction of the device, associated with the low thermal conductivity of the substrate. The results obtained reveal that the ICP-RIE dry etching did not cause significant damage to the surface.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":" 8","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this study, the (001) β-Ga2O3 surface was dry etched employing the inductively coupled plasma-reactive ion etching (ICP-RIE) system, and Au/Ni/β-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on the etched surface. The impact of ion bombardment on the (001) β-Ga2O3 surface during dry etching and its effect on current-voltage (I–V) characteristics and breakdown voltage was investigated. The forward current at higher bias decreased with increasing temperature due to the fact that the higher temperatures cause them to be less mobile owing to the scattering effects that reduce the on-current. The temperature-dependent I–V characterization of the Au/Ni/β-Ga2O3 SBD revealed a strong temperature dependence of barrier height and ideality factor associated with the barrier height inhomogeneity at the interface between Ni and β-Ga2O3. Analysis of the barrier height inhomogeneities with the assumption of Gaussian distribution of barrier heights confirmed the presence of a double Gaussian barrier distribution having mean barrier heights of 0.71 and 1.21 eV in the temperature range of (83–158) and (183–283 K), respectively. The Richardson constant value obtained from the modified Richardson plot interpreted with the consideration of Gaussian distribution of barrier heights closely matched with the theoretical value of β-Ga2O3. The fabricated Au/Ni/β-Ga2O3 SBD showed consistent breakdown voltage in the range of 670–695 V over repeated measurements with a time interval of 1 min without exhibiting any damage. However, after an initial breakdown voltage measurement, repeating the measurement with a 30 s interval led to an exponential increase in current, leading to the destruction of the device, associated with the low thermal conductivity of the substrate. The results obtained reveal that the ICP-RIE dry etching did not cause significant damage to the surface.
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电感耦合等离子体蚀刻对 (001) β-Ga2O3 肖特基势垒二极管界面势垒行为的影响
本研究采用电感耦合等离子体反应离子刻蚀(ICP-RIE)系统对 (001) β-Ga2O3 表面进行了干法刻蚀,并在刻蚀表面制备了金/镍/β-Ga2O3 肖特基势垒二极管(SBD)。研究了干蚀刻过程中离子轰击对 (001) β-Ga2O3 表面的影响及其对电流电压 (I-V) 特性和击穿电压的影响。较高偏压下的正向电流随着温度的升高而减小,这是由于较高的温度会产生散射效应,从而减小导通电流。Au/Ni/β-Ga2O3 SBD 随温度变化的 I-V 特性表明,势垒高度和理想因子与 Ni 和 β-Ga2O3 之间界面的势垒高度不均匀性有关,具有很强的温度依赖性。根据势垒高度的高斯分布假设对势垒高度不均匀性进行的分析表明,在 (83-158) 和 (183-283 K) 温度范围内,存在平均势垒高度分别为 0.71 和 1.21 eV 的双高斯势垒分布。从修正的理查德森曲线图中得到的理查德森常数值与 β-Ga2O3 的理论值非常接近。在时间间隔为 1 分钟的重复测量中,制备的 Au/Ni/β-Ga2O3 SBD 显示出一致的击穿电压,范围在 670-695 V 之间,没有出现任何损坏。然而,在首次测量击穿电压后,以 30 秒的时间间隔重复测量会导致电流呈指数增长,从而导致器件损坏,这与基底的低热导率有关。所得结果表明,ICP-RIE 干法蚀刻并未对表面造成重大损坏。
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