{"title":"Interface trap induced RF and low frequency noise analysis under temperature variations of a hetero-stacked source L-gate TFET","authors":"D. Das, Ujjal Chakraborty, Pranjal Borah","doi":"10.1088/1361-6641/ad5466","DOIUrl":null,"url":null,"abstract":"\n This brief exclusively demonstrates a comprehensive analysis of the adverse impact of interface trap charge (ITC) under the influence of temperature variation on a hetero-stacked (HS) source L-gate tunnel field effect transistor (TFET) having SiGe pocket. An investigation of both static and RF characteristics has been carried out. It appears that ITCs situated at the Silicon (Si)/oxide interface fluctuates the flat-band voltage to alter the various analog/RF parameter characteristics. Uniform ITCs are seen to be less susceptible to degradation in device characteristics. The low frequency noise (LFN) analysis has also been investigated considering the impact of different trap distribution (Uniform and Gaussian) and densities which are compared thereafter. Besides, the temperature dependent LFN has been studied under influence of different distributed ITCs which is rarely explored yet. Moreover, a comparative analysis has been done on the device behaviour and LFN characteristics of HS L-gate TFET structures with and without SiGe pocket. The structure with SiGe pocket is found to be insusceptible to noise effects.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad5466","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This brief exclusively demonstrates a comprehensive analysis of the adverse impact of interface trap charge (ITC) under the influence of temperature variation on a hetero-stacked (HS) source L-gate tunnel field effect transistor (TFET) having SiGe pocket. An investigation of both static and RF characteristics has been carried out. It appears that ITCs situated at the Silicon (Si)/oxide interface fluctuates the flat-band voltage to alter the various analog/RF parameter characteristics. Uniform ITCs are seen to be less susceptible to degradation in device characteristics. The low frequency noise (LFN) analysis has also been investigated considering the impact of different trap distribution (Uniform and Gaussian) and densities which are compared thereafter. Besides, the temperature dependent LFN has been studied under influence of different distributed ITCs which is rarely explored yet. Moreover, a comparative analysis has been done on the device behaviour and LFN characteristics of HS L-gate TFET structures with and without SiGe pocket. The structure with SiGe pocket is found to be insusceptible to noise effects.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.