Crossover between rigid and reconstructed moiré lattice in h-BN-encapsulated twisted bilayer WSe2 with different twist angles†

IF 5.8 3区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Nanoscale Pub Date : 2024-06-27 DOI:10.1039/D4NR01863J

Kei Kinoshita, Yung-Chang Lin, Rai Moriya, Shota Okazaki, Momoko Onodera, Yijin Zhang, Ryosuke Senga, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Kazu Suenaga and Tomoki Machida

{"title":"Crossover between rigid and reconstructed moiré lattice in h-BN-encapsulated twisted bilayer WSe2 with different twist angles†","authors":"Kei Kinoshita, Yung-Chang Lin, Rai Moriya, Shota Okazaki, Momoko Onodera, Yijin Zhang, Ryosuke Senga, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Kazu Suenaga and Tomoki Machida","doi":"10.1039/D4NR01863J","DOIUrl":null,"url":null,"abstract":"A moiré lattice in a twisted-bilayer transition metal dichalcogenide (tBL-TMD) exhibits a complex atomic reconstruction effect when its twist angle is less than a few degrees. The influence of the atomic reconstruction on material properties of the tBL-TMD has been of particular interest. In this study, we performed scanning transmission electron microscopy (STEM) imaging of a moiré lattice in h-BN-encapsulated twisted bilayer WSe2 with various twist angles. Atomic-resolution imaging of the moiré lattice revealed a reconstructed moiré lattice below a crossover twist angle of ∼4° and a rigid moiré lattice above this angle. Our findings indicate that h-BN encapsulation has a considerable influence on lattice reconstruction, as the crossover twist angle was larger in h-BN-encapsulated devices compared to non-encapsulated devices. We believe that this difference is due to the improved flatness and uniformity of the twisted bilayers with h-BN encapsulation. Our results provide a foundation for a deeper understanding of the lattice reconstruction in twisted TMD materials with h-BN encapsulation.","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":null,"pages":null},"PeriodicalIF":5.8000,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/nr/d4nr01863j","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

A moiré lattice in a twisted-bilayer transition metal dichalcogenide (tBL-TMD) exhibits a complex atomic reconstruction effect when its twist angle is less than a few degrees. The influence of the atomic reconstruction on material properties of the tBL-TMD has been of particular interest. In this study, we performed scanning transmission electron microscopy (STEM) imaging of a moiré lattice in h-BN-encapsulated twisted bilayer WSe₂ with various twist angles. Atomic-resolution imaging of the moiré lattice revealed a reconstructed moiré lattice below a crossover twist angle of ∼4° and a rigid moiré lattice above this angle. Our findings indicate that h-BN encapsulation has a considerable influence on lattice reconstruction, as the crossover twist angle was larger in h-BN-encapsulated devices compared to non-encapsulated devices. We believe that this difference is due to the improved flatness and uniformity of the twisted bilayers with h-BN encapsulation. Our results provide a foundation for a deeper understanding of the lattice reconstruction in twisted TMD materials with h-BN encapsulation.

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不同扭转角的 h-BN 封装扭曲双层 WSe2 中的刚性和重构莫尔雷晶格之间的转换

当扭转角小于几度时，扭转层过渡金属二钙化物（tBL-TMD）中的摩尔格子会表现出复杂的原子重构效应。原子重构对 tBL-TMD 材料特性的影响一直备受关注。在这项研究中，我们对具有不同扭转角的 h-BN 包封扭转双层 WSe2 中的摩尔格子进行了扫描透射电子显微镜（STEM）成像。摩尔纹晶格的原子分辨率成像显示，在约 4° 的交叉扭转角以下是重建的摩尔纹晶格，而在此角度以上则是刚性摩尔纹晶格。我们的研究结果表明，h-BN 封装对晶格重建有相当大的影响，因为与非封装器件相比，h-BN 封装器件的交叉扭转角更大。我们认为，这种差异是由于采用 h-BN 封装的扭曲双层膜的平整度和均匀性得到了改善。我们的研究结果为深入理解 h-BN 封装的扭曲 TMD 材料的晶格重构奠定了基础。

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来源期刊

Nanoscale CHEMISTRY, MULTIDISCIPLINARY-NANOSCIENCE & NANOTECHNOLOGY

CiteScore

12.10

自引率

3.00%

发文量

1628

审稿时长

1.6 months

期刊介绍： Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.