Displacement cascade and defect-driven simulations in V-Ti-Ta-Nb high-entropy alloy

Abstract

High-entropy alloys (HEA) have attracted considerable attention in the development of nuclear materials due to their excellent properties. In this study, the primary irradiation damage and long-term defect evolution of pure V, V-5Ti-5Ta conventional alloy, V-Ti-Ta MEA and V-Ti-Ta-Nb HEA were simulated by molecular dynamics (MD) to understand the irradiation resistance mechanism of these four systems. The primary irradiation damage simulation results indicate that the V-Ti-Ta MEA and V-Ti-Ta-Nb HEA exhibit a delayed thermal peak, a longer defect recombination time and a slightly higher number of final Frenkel pairs (FPs) than pure V and V-5Ti-5Ta alloy. Both primary irradiation damage and long-time defect evolution results show that V-Ti-Ta MEA and V-Ti-Ta-Nb HEA have lower defect clustering fraction, cluster size and dislocation loop size than pure V and V-5Ti-5Ta. This is because V-Ti-Ta MEA and V-Ti-Ta-Nb HEA exhibit lower dislocation loop binding energy and defect mobility compared to pure V and V-5Ti-5Ta alloy. This study investigates the reasons for the better radiation resistance of V-Ti-Ta MEA and V-Ti-Ta-Nb HEA than pure V and V-5Ti-5Ta conventional alloys.