{"title":"Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers","authors":"","doi":"10.1016/j.carbon.2024.119404","DOIUrl":null,"url":null,"abstract":"<div><p>The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the conductivity is exceptionally high without the need for substitutional doping, thus enabling a wide range of electronic applications. Although the conductivity is commonly explained by surface transfer doping due to air-borne surface acceptors, there remains uncertainty regarding the main determining factors that govern the degree of band bending and hole density, which are crucial for the design of electronic devices. Here, we elucidate the dominant factor influencing band bending by creating shallow nitrogen-vacancy (NV) centers beneath the hydrogen-terminated diamond surface through nitrogen ion implantation at varying fluences. We measured the photoluminescence and optically detected magnetic resonance (ODMR) of the NV centers, as well as the surface conductivity, as a function of the nitrogen implantation fluence. The disappearance of the conductivity with increasing nitrogen implantation fluence coincides with the appearance of photoluminescence and ODMR signals from negatively charged NV centers. This finding indicates that band bending is not exclusively determined by the work-function difference between diamond and the surface acceptor material, but by the finite density of surface acceptors. This work emphasizes the importance of distinguishing work-function-difference-limited band bending and surface-acceptor-density-limited band bending when modeling the surface transfer doping, and provides useful insights for the development of devices based on hydrogen-terminated diamond.</p></div>","PeriodicalId":262,"journal":{"name":"Carbon","volume":null,"pages":null},"PeriodicalIF":10.5000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Carbon","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0008622324006237","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The surface conductivity of hydrogen-terminated diamond is a topic of great interest from both scientific and technological perspectives. This is primarily due to the fact that the conductivity is exceptionally high without the need for substitutional doping, thus enabling a wide range of electronic applications. Although the conductivity is commonly explained by surface transfer doping due to air-borne surface acceptors, there remains uncertainty regarding the main determining factors that govern the degree of band bending and hole density, which are crucial for the design of electronic devices. Here, we elucidate the dominant factor influencing band bending by creating shallow nitrogen-vacancy (NV) centers beneath the hydrogen-terminated diamond surface through nitrogen ion implantation at varying fluences. We measured the photoluminescence and optically detected magnetic resonance (ODMR) of the NV centers, as well as the surface conductivity, as a function of the nitrogen implantation fluence. The disappearance of the conductivity with increasing nitrogen implantation fluence coincides with the appearance of photoluminescence and ODMR signals from negatively charged NV centers. This finding indicates that band bending is not exclusively determined by the work-function difference between diamond and the surface acceptor material, but by the finite density of surface acceptors. This work emphasizes the importance of distinguishing work-function-difference-limited band bending and surface-acceptor-density-limited band bending when modeling the surface transfer doping, and provides useful insights for the development of devices based on hydrogen-terminated diamond.
期刊介绍:
The journal Carbon is an international multidisciplinary forum for communicating scientific advances in the field of carbon materials. It reports new findings related to the formation, structure, properties, behaviors, and technological applications of carbons. Carbons are a broad class of ordered or disordered solid phases composed primarily of elemental carbon, including but not limited to carbon black, carbon fibers and filaments, carbon nanotubes, diamond and diamond-like carbon, fullerenes, glassy carbon, graphite, graphene, graphene-oxide, porous carbons, pyrolytic carbon, and other sp2 and non-sp2 hybridized carbon systems. Carbon is the companion title to the open access journal Carbon Trends. Relevant application areas for carbon materials include biology and medicine, catalysis, electronic, optoelectronic, spintronic, high-frequency, and photonic devices, energy storage and conversion systems, environmental applications and water treatment, smart materials and systems, and structural and thermal applications.