Study the Effect of Mn-Substitution on the Structural, Magnetic, and Dielectric Properties of Ba0.75Sr0.25Ti1−xMnxO3 Ceramics

Abstract

Conventional solid-state reaction method has been cautiously employed to prepare the Ba_0.75Sr_0.25Ti_1−xMn_xO₃ ceramic where Sr was firmly doped at the Ba site and Mn was doped with different densities at the Ti site. Since the performance of materials varies with frequency, electric field, and temperature, we have elucidated the various features of the synthesized samples for the sake of scientific benefit in the fields of microelectronics, telecommunications, and spintronics. Structural and morphological features of the ready samples were examined by X-ray diffraction and scanning electron microscopy (SEM). The crystal's tetragonal behavior was verified by XRD analysis, and with the increment of Mn content, the volume of the unit cell is little changed. It is clear from the SEM images that the grain size of the prepared samples increases with Mn doping. The dielectric properties of Ba_0.75Sr_0.25Ti_1−xMn_xO₃ were measured by dielectric constant and AC conductivity in a wide range of frequency from 1 kHz to 10 MHz. This result also explores that the dielectric constant rises with the concentration of Mn, most significantly for the 20% Mn substitution with Ti. We also found from the experimental result that the dielectric constant is high in the frequency range of 1–10 kHz. The magnetic permeability of the prepared sample increased with 10% and 20% of Mn replacement. Ferromagnetic features with a weak coercive field and the increased ferromagnetic order with rising Mn concentrations of the prepared samples were confirmed by VSM data analysis. The developed multiferroic materials can be employed in future spintronic devices like spin transistors, sensors, spin diodes, and memory devices.