I. O. Koshelev, I. S. Volchkov, P. L. Podkur, D. R. Khairetdinova, I. M. Doludenko, V. M. Kanevsky
{"title":"Textured CdTe Thin Films on Silicon and Sapphire Substrates: Thermal Vapor Deposition and Structural Characterization","authors":"I. O. Koshelev, I. S. Volchkov, P. L. Podkur, D. R. Khairetdinova, I. M. Doludenko, V. M. Kanevsky","doi":"10.1134/S1063774524600030","DOIUrl":null,"url":null,"abstract":"<p>CdTe thin films were grown on Si(111) and Al<sub>2</sub>O<sub>3</sub>(0001) substrates by thermal vapor deposition. The obtained films were studied by atomic-force and scanning electron microscopy, as well as by X-ray diffraction analysis. It was found that thin films of both wurtzite and sphalerite CdTe modifications can be grown on Al<sub>2</sub>O<sub>3</sub>(0001) substrates. Thin films of the sphalerite CdTe modification can be obtained on Si substrates. It was shown that the elemental composition of thin films is close to stoichiometry, and, in the case of thin films grown on Al<sub>2</sub>O<sub>3</sub>(0001), the deviation was no more than 1 at %.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 2","pages":"235 - 238"},"PeriodicalIF":0.6000,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774524600030","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
CdTe thin films were grown on Si(111) and Al2O3(0001) substrates by thermal vapor deposition. The obtained films were studied by atomic-force and scanning electron microscopy, as well as by X-ray diffraction analysis. It was found that thin films of both wurtzite and sphalerite CdTe modifications can be grown on Al2O3(0001) substrates. Thin films of the sphalerite CdTe modification can be obtained on Si substrates. It was shown that the elemental composition of thin films is close to stoichiometry, and, in the case of thin films grown on Al2O3(0001), the deviation was no more than 1 at %.
期刊介绍：
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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