Localization of Aluminum in ZnO:Al Layers during Magnetron Sputtering Deposition

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY Crystallography Reports Pub Date : 2024-06-06 DOI:10.1134/S1063774524600236
A. Sh. Asvarov, A. E. Muslimov, V. M. Kanevsky, A. K. Akhmedov, A. Kh. Abduev, Z. Kh. Kalazhokov
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Abstract

The specific features of aluminum localization and the mechanism of formation of donor centers in ZnO:Al layers synthesized by rf magnetron sputtering have been investigated. It is shown that aluminum is mainly localized on intergranular boundaries of zinc oxide in the intrinsic oxide phase. The mechanism of Al oxidation on grain boundaries depends strongly on the oxygen content in the working chamber: during sputtering in a pure argon atmosphere with oxygen deficit, aluminum oxidation occurs as a result of the interaction of the surface layer of zinc oxide crystallites with oxygen, which leads to the formation of surface donor centers on grain boundaries. With an increase in partial oxygen pressure aluminum is mainly oxidized by the oxygen from the gas atmosphere, forming an intrinsic barrier phase on grain boundaries.

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磁控溅射沉积过程中 ZnO:Al 层中铝的定位
摘要 研究了通过射频磁控溅射合成的氧化锌:铝层中铝定位的具体特征和供体中心的形成机制。研究表明,铝主要定位于本征氧化相氧化锌的晶间边界。铝在晶界上氧化的机理在很大程度上取决于工作室内的氧气含量:在缺氧的纯氩气环境中进行溅射时,由于氧化锌晶粒表层与氧气相互作用,导致在晶界上形成表面供体中心,从而发生铝氧化。随着氧分压的增加,铝主要被气体环境中的氧氧化,在晶界上形成固有阻挡相。
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来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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